GBU8B

GBU8A - GBU8M — Bridge Rectifiers February 2010 GBU8A - GBU8M Bridge Rectifiers Features • • • • • Glass passivated junction Surge overload rating: 200 amperes peak Reliable low cost construction utilizing molded plastic technique. Ideal for printed circuit board. UL certified with UL certificate #s E111753 and E326243. +~ ~ - GBU Absolute Maximum Ratings * Symbol VRRM VRMS VR IF(AV) IFSM TSTG TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Recitified Forward Current, @ TA = 100°C @ TA = 45°C Non-Repetitive Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Storage Temperature Range Value 8A 50 35 50 8B 100 70 100 8D 200 140 200 8G 400 280 400 8.0 6.0 200 8J 600 420 600 8K 800 560 800 8M 1000 700 1000 Units V V V A A A °C -55 to +150 Operating Junction Temperature -55 to +150 °C TJ * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RθJA Power Dissipation Thermal Resistance, Junction to Ambient, * per leg Parameter Value 16 18 3 Units W °C/W °C/W Thermal Resistance, Junction to Case, * per leg RθJC * Device mounted on PCB with 0.5 × 0.5” (12 × 12mm). Electrical Characteristics Symbol VF IR TA = 25°C unless otherwise noted Parameter Forward Voltage, per element @ 8.0A Reverse Current, per element @ Rated VR TA = 25°C TA = 100°C I2t Rating for Fusing t < 8.35ms Value 1.0 50 500 166 Units V μA μA A2s © 2010 Fairchild Semiconductor Corporation GBU8A - GBU8M Rev. A5 1 www.fairchildsemi.com GBU8A - GBU8M — Bridge Rectifiers Typical Performance Characteristics Average Rectified Forward Current, IF [A] 8 6 Forward Current, IF [A] HEAT-SINK MOUNTING, TC 4"x4"x0.15" COPPER PLATE 100 10 4 1 TA = 2 5º C 2 MOUNTED ON PC BOARD, TA 0.5" (12.7mm) LEAD LENGTH 60Hz RESISTIVE OF INDUCTIVE LOAD 0 50 100 150 Pulse Width = 300μs 1% Duty Cycle 0 Ambient Temperature [ºC] 0.1 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage, V F [V] 1.3 1.4 Peak. Forward Surge Current, IFSM[A] 10 T C = 100 º C 250 Tj=150°C 200 8.3ms Single Half Sine-Wave Reverse Current, IR [mA] 1 150 100 0.1 TA = 2 5 º C 50 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] 0 1 10 100 Number of Cycles at 60Hz 400 Total Capacitance, CT [pF] 100 50 TA = 2 5º C f = 1.0 MHz Visg = 50m Vp-p 10 1 5 10 Reverse Voltage, VR [V] 50 100 © 2010 Fairchild Semiconductor Corporation GBU8A - GBU8M Rev. A5 2 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 © Fairchild Semiconductor Corporation www.fairchildsemi.com