HGT1N40N60A4D

HGT1N40N60A4D D ata Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49349. Features • 100kHz Operation At 390V, 22A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC • Low Conduction Loss Symbol C G Ordering Information PART NUMBER HGT1N40N60A4D PACKAGE SOT-227 BRAND 40N60A4D E Packaging JEDEC STYLE SOT-227B GATE EMITTER NOTE: When ordering, use the entire part number. TAB (ISOLATED) COLLECTOR EMITTER Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B HGT1N40N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Noted HGT1N40N60A4D 600 110 45 300 ±20 ±30 200A at 600V 298 2.3 2500 -55 to 150 1.5 1.7 UNITS V A A A V V W W/oC V oC N-m N-m Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RMS Isolation Voltage, Any Terminal To Case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .VISOL Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Terminal Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications PARAMETER TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA VGEP Qg(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF VEC IEC = 40A IGBT and Diode at TJ = 125oC ICE = 40A VCE = 0.65 BVCES VGE = 15V RG= 2.2Ω L = 200µH Test Circuit (Figure 24) TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = 40A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 4.5 200 TYP 1.7 1.5 5.6 8.5 350 450 25 18 145 35 400 850 370 27 20 185 55 400 1220 660 2.25 MAX 250 3.0 2.7 2.0 7 ±250 405 520 225 95 1400 775 2.7 UNITS V µA mA V V V nA A V nC nC ns ns ns ns µJ µJ µJ ns ns ns ns µJ µJ µJ V Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 2.2Ω, VGE = 15V L = 100µH, VCE = 600V IC = 40A, VCE = 0.5 BVCES IC = 40A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) Diode Forward Voltage IGBT and Diode at TJ = 25oC ICE = 40A VCE = 0.65 BVCES VGE =15V RG = 2.2Ω L = 200µH Test Circuit (Figure 24) ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B HGT1N40N60A4D Electrical Specifications PARAMETER Diode Reverse Recovery Time Thermal Resistance Junction To Case TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL trr RθJC TEST CONDITIONS IEC = 40A, dIEC/dt = 200A/µs IGBT Diode NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. MIN TYP 48 MAX 55 0.42 1.8 UNITS ns oC/W oC/W Typical Performance Curves 120 (Unless Otherwise Specified) 225 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 15V ICE , DC COLLECTOR CURRENT (A) 100 TJ = 150oC TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH 80 60 40 20 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 300 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (ms) TC fMAX, OPERATING FREQUENCY (kHz) 75oC VGE 15V VCE = 390V, RG = 2.2Ω, TJ = 125oC 10 ISC 8 100 1000 800 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.42oC/W, SEE NOTES 10 1 10 20 100 6 tSC 4 600 400 2 10 11 12 13 14 15 16 VGE , GATE TO EMITTER VOLTAGE (V) 200 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B ISC, PEAK SHORT CIRCUIT CURRENT (A) 12 1200 HGT1N40N60A4D Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 80 70 60 50 40 30 20 TJ = 150oC 10 0 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25oC TJ = 125oC DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250ms (Unless Otherwise Specified) (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 80 70 60 50 40 30 20 10 0 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC TJ = 25oC TJ = 125oC DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250ms FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5500 EON2 , TURN-ON ENERGY LOSS (mJ) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 EOFF , TURN-OFF ENERGY LOSS (mJ) RG = 2.2Ω, L = 200mH, VCE = 390V 1800 1600 1400 1200 1000 800 600 400 200 0 0 10 20 30 TJ = 25oC, VGE = 12V OR 15V 40 50 60 70 80 TJ = 125oC, VGE = 12V OR 15V RG = 2.2Ω, L = 200mH, VCE = 390V TJ = 125oC, VGE = 12V, VGE = 15V TJ = 25oC, VGE = 12V, VGE = 15V 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 42 td(ON)I, TURN-ON DELAY TIME (ns) 40 38 36 34 32 30 28 26 24 22 0 RG = 2.2Ω, L = 200mH, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 15V trI , RISE TIME (ns) 120 100 80 60 40 20 RG = 2.2Ω, L = 200mH, VCE = 390V TJ = 125oC, TJ = 25oC, VGE = 12V TJ = 25oC, TJ = 125oC, VGE = 15V 10 20 30 40 50 60 70 80 0 0 10 20 30 TJ = 25oC, TJ = 125oC, VGE = 15V 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B HGT1N40N60A4D Typical Performance Curves 190 td(OFF)I , TURN-OFF DELAY TIME (ns) 180 170 VGE = 12V, VGE = 15V, TJ = 125oC 160 150 VGE = 12V or 15V, TJ = 25oC 140 RG = 2.2Ω, L = 200mH, VCE = 390V 130 0 10 20 30 40 50 60 70 80 tfI , FALL TIME (ns) (Unless Otherwise Specified) (Continued) 70 65 60 55 50 45 40 35 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 0 RG = 2.2Ω, L = 200mH, VCE = 390V TJ = 125oC, VGE = 12V OR 15V TJ = 25oC, VGE = 12V OR 15V 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 400 350 300 250 200 150 100 50 0 6 7 8 9 10 11 VGE, GATE TO EMITTER VOLTAGE (V) TJ = -55oC TJ = 25oC VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250ms 16 14 12 10 8 6 4 2 0 0 IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC VCE = 600V VCE = 400V TJ = 125oC VCE = 200V 50 100 150 200 250 300 350 400 QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 5 TJ = 125oC, VCE = 390V, VGE = 15V ETOTAL = EON2 +EOFF 4 ICE = 80A 70 FIGURE 14. GATE CHARGE WAVEFORMS TJ = 125oC, VCE = 390V, VGE = 15V ETOTAL = EON2 +EOFF 10 ICE = 80A ICE = 40A 1 ICE = 20A 3 2 ICE = 40A 1 ICE = 20A 0 25 50 75 100 125 150 0.1 1 10 100 500 TC , CASE TEMPERATURE (oC) RG, GATE RESISTANCE (Ω) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B HGT1N40N60A4D Typical Performance Curves 14 12 C, CAPACITANCE (nF) 10 8 CIES 6 4 2 CRES 0 0 10 20 30 40 50 60 70 80 90 100 COES FREQUENCY = 1MHz (Unless Otherwise Specified) (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250ms, TJ = 25oC 2.3 2.2 ICE = 80A 2.1 ICE = 40A 2.0 ICE = 20A 1.9 8 9 10 11 12 13 14 15 16 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 50 45 IEC , FORWARD CURRENT (A) 40 35 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 VEC , FORWARD VOLTAGE (V) TJ = 25oC TJ = 125oC DUTY CYCLE < 0.5%, PULSE DURATION = 250ms trr , RECOVERY TIMES (ns) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 dIEC/dt = 200A/µs 125oC trr 125oC tb 25oC trr 125oC ta 25oC ta 25oC tb 5 10 15 20 25 30 35 40 IEC , FORWARD CURRENT (A) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT Qrr , REVERSE RECOVERY CHARGE (nC) 70 65 trr , RECOVERY TIMES (ns) 60 55 50 45 40 35 30 25 20 15 10 200 300 400 500 600 125oC tb 125oC ta IF = 40A, VCE = 390V 1400 1200 1000 VCE = 390V 125oC, IF = 40A 125oC, IF = 20A 800 600 400 200 0 200 25oC, IF = 20A 25oC, IF = 40A 25oC ta 25oC tb 700 800 900 1000 400 600 800 1000 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B HGT1N40N60A4D Typical Performance Curves ZθJC , NORMALIZED THERMAL RESPONSE (Unless Otherwise Specified) (Continued) 100 0.50 0.20 10-1 0.10 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-1 t1 PD t2 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE Test Circuit and Waveforms HGT1N40N60A4D 90% VGE L = 100µH RG = 2.2Ω + HGT1N40N60A4D VDD = 390V ICE EOFF VCE 90% 10% td(OFF)I tfI trI td(ON)I 10% EON2 FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B HGT1N40N60A4D Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B HGT1N40N60A4D SOT-227B ISOTOP PACKAGE o R3.97 B A J K P INCHES SYMBOL A B MIN 1.240 0.310 0.163 0.163 0.165 0.588 1.186 1.494 0.976 0.472 0.372 0.030 0.495 0.990 0.080 0.108 1.049 0.164 0.186 MAX 1.255 0.322 0.169 0.169 0.169 0.594 1.192 1.504 0.986 0.480 0.378 0.033 0.506 1.000 0.084 0.124 1.059 0.174 0.191 MILLIMETERS MIN 31.50 7.87 4.14 4.14 4.19 14.99 30.12 37.95 24.79 11.99 9.45 0.76 12.57 25.15 2.03 2.74 26.64 4.16 4.72 MAX 31.88 8.18 4.29 4.29 4.29 15.09 30.28 38.20 25.04 12.19 9.60 0.84 12.85 25.40 2.13 3.15 26.90 4.42 4.85 NOTES Rev. 0 8/00 D C I MN C D E S F G E F G H Q L H I J K L M N O O R P Q R S ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4