HGT1S14N37G3VLS

HGT1S14N37G3VLS, HGTP14N37G3VL Data Sheet December 2001 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. Formerly Developmental Type TA49169. Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Internal Series and Shunt Gate Resistors • Low Conduction Loss • Ignition Energy Capable Packaging JEDEC TO-263AB BRAND Ordering Information PART NUMBER HGT1S14N37G3VLS HGTP14N37G3VL PACKAGE TO-263AB TO-220AB 14N37GVL 14N37GVL G E COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A Symbol COLLECTOR JEDEC TO-220AB E R1 GATE R2 C G EMITTER COLLECTOR (FLANGE) Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1S14N37G3VLS, HGTP14N37G3VL Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . IC110 Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L = 3mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS o C = 150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UNITS V V A A V A A mJ W W/oC oC oC 380 24 25 18 ±10 15 11.5 340 136 0.91 -55 to 175 -55 to 175 5 2 300 260 at L = 3mH, T Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ Electrostatic Voltage HBM at 250pF, 1500 Ω All Pin Configurations. . . . . . . . . . . . . . . . . . ESD Electrostatic Voltage MM at 200pF, 0 Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . . . . ESD Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG kV kV oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. May be exceeded if IGEM is limited to 10mA. Electrical Specifications PARAMETER TJ = 25oC, Unless Otherwise Specified SYMBOL BVCER VGEP QG(ON) BVCE(CL) BVECS ICES TEST CONDITIONS IC = 10mA, RG = 1kΩ, VGE = 0V, TJ = -55oC to 175oC (Figure 16) IC = 6.5A, VCE = 12V IC = 6.5A, VCE = 12V, VGE = 5V (Figure 16) IC = 15A, R G = 1kΩ IC = 10mA VCE = 300V, VGE = 0V (Figure 13) VCE = 250V, VGE = 0V (Figure 13) TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = -55oC TJ = 25oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC MIN 320 320 24 1.3 10 VGE = ±10V ±310 TYP 350 2.76 27 350 28 1.3 1.25 1.45 1.5 1.6 1.7 1.8 70 18 ±500 MAX 380 380 40 250 10 75 10 50 1.45 1.6 1.75 1.9 2 2.3 2.2 150 26 ±1000 UNITS V V nC V V µA µA µA µA mA mA V V V V V V V Ω kΩ µA Collector to Emitter Breakdown Voltage Gate to Emitter Plateau Voltage Gate Charge Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Emitter to Collector Leakage Current IECS VEC = -24V, VGE = 0V (Figure 13) IC = 6A, VGE = 4.0V (Figures 3 through 9) IC = 10A, VGE = 4.5V (Figures 3 through 9) IC = 14A, VGE = 5V (Figures 3 through 9) Collector to Emitter On-State Voltage VCE(ON) Gate to Emitter Threshold Voltage Gate Series Resistance Gate to Emitter Resistance Gate to Emitter Leakage Current VGE(TH) R1 R2 IGES IC = 1mA, V CE = VGE (Figure 12) ©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Electrical Specifications PARAMETER Gate to Emitter Breakdown Voltage Current Turn-On Delay Time Resistive Load Current Turn-On Rise Time Resistive Load Current Turn-Off Time Inductive Load Inductive Use Test TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL BVGES td(ON)I TEST CONDITIONS IGES = ±2mA IC = 6.5A, RG = 1kΩ, VGE = 5V, RL = 2.1Ω, VDD = 14V, TJ = 150oC (Figure 14) IC = 6.5A, RG = 1kΩ VGE = 5V, RL = 2.1Ω VDD = 14V, TJ = 150oC (Figure 14) MIN ±12 TYP ±14 1 MAX 4 UNITS V µs trI - 3 7 µs td(OFF)I + tfI IC = 6.5A, RG = 1kΩ VGE = 5V, L = 300µH VDD = 300V, TJ = 150oC (Figure 14) ISCIS L = 3mH, VG = 5V, RG = 1kΩ (Figures 1 and 2) (Figure 18) TC = 150oC TC = 25oC - 10 30 µs 11.5 15 - - 1.1 A A oC/W Thermal Resistance RθJC Typical Performance Curves ISCIS , INDUCTIVE SWITCHING CURRENT (A) 60 Unless Otherwise Specified ISCIS, INDUCTIVE SWITCHING CURRENT (A) 56 RG = 1kΩ, VGE = 5V 48 40 32 24 16 8 0 TJ = 150oC TJ = 25oC ISCIS CAN BE LIMITED BY gfs at VGE = 5V RG = 1kΩ, VGE = 5V 52 44 36 28 20 12 4 40 TJ = 150oC 80 120 160 200 TJ = 25oC ISCIS CAN BE LIMITED BY gfs at VGE = 5V 0 2 4 6 8 10 tAV, TIME IN AVALANCHE (ms) L, INDUCTANCE (mH) FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN AVALANCHE FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs INDUCTANCE VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.28 ICE = 6A 1.24 1.20 1.16 1.12 1.08 1.04 1.00 -50 VGE = 4.5V VGE = 5.0V VGE = 4.0V 1.50 ICE = 10A 1.46 VGE = 4.0V 1.42 VGE = 4.5V 1.38 1.34 VGE = 5.0V 25 100 175 1.30 -50 25 100 175 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERARURE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE ©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 45 DUTY CYCLE < 0.5%, TJ = 175oC PULSE DURATION = 250µs VGE = 4.5V 30 VGE = 4.0V 15 Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 5.0V 45 DUTY CYCLE < 0.5%, TJ = 150oC PULSE DURATION = 250µs VGE = 4.5V VGE = 5.0V 30 VGE = 4.0V 15 0 0 1 2 3 4 5 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 60 50 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs VGE = 4.5V 70 60 50 40 VGE = 5.0V DUTY CYCLE < 0.5%, TJ = -40oC PULSE DURATION = 250µs VGE = 4.5V VGE = 5.0V 40 30 20 10 0 VGE = 4.0V VGE = 4.0V 30 20 10 0 0 1 2 3 4 5 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 60 VGE 50 40 30 20 10 0 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V TJ = 25oC 40 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 32 TJ = 150oC 24 16 TJ = 25oC 8 TJ = -40oC 1 2 3 4 5 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 10. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves 28 ICE , DC COLLECTOR CURRENT (A) 24 20 16 12 8 4 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) VGE(TH) , THRESHOLD VOLTAGE (V) VGE = 5V Unless Otherwise Specified (Continued) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -50 ICE = 1mA VCE = VGE 25 100 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 10000 16 ICE = 6.5A, VGE = 5V, RG = 1kΩ VECS = 24V SWITCHING TIME (µs) 14 RESISTIVE tOFF 12 10 8 6 RESISTIVE tON 4 INDUCTIVE tOFF LEAKAGE CURRENTS (µA) 1000 100 VCES = 300V 10 1 VCES = 250V 0.1 25 50 75 100 125 150 175 2 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 13. LEAKAGE CURRENT vs JUNCTION TEMPERATURE FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE 2400 FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) 1600 CIES 1200 800 400 0 VGE , GATE TO EMITTER VOLTAGE (V) 8 IG(REF) = 1mA, RL = 1.865Ω, TJ = 25oC 6 VCE = 12V 4 CRES COES 0 5 10 15 20 25 2 VCE = 6V 0 0 8 16 24 32 40 48 56 VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS ©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves 360 BVCER , BREAKDOWN VOLTAGE (V) TJ (oC) 350 -55 25 150 340 175 ICER = 10mA Unless Otherwise Specified (Continued) 330 320 0 2 4 6 8 10 RG , GATE SERIES RESISTANCE (kΩ) FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE ZθJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-2 10-1 PD t2 100 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuits 3mH VDD C RG = 1kΩ DUT G E 5V G R or L LOAD C RG PULSE GEN DUT + E VDD FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B