HGT1S7N60C3D

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49121. Features 4A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time...................140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode JEDEC TO-220AB COLLECTOR (FLANGE) GATE EMITTER JEDEC TO-263AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) JEDEC TO-262 EMITTER GATE COLLECTOR (FLANGE) COLLECTOR G C E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2005 Fairchild Semiconductor Corporation HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCES IC25 IC110 I(AVG) ICM VGES VGEM SSOA PD TJ, TSTG TL tSC Parameter Collector to Emitter Voltage Collector Current Continuous At TC = 25oC Average Diode Forward Current at 110oC Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150oC (Figure 14) Power Dissipation Total at TC = 25oC Power Dissipation Derating TC > 25oC Collector Current Continuous At TC = 110oC Ratings 600 14 7 8 56 ±20 ±30 40A at 480V 60 0.487 -40 to 150 260 1 8 W W/oC o o Units V A A A A V V Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Short Circuit Withstand Time (Note 2) at VGE = 15V Short Circuit Withstand Time (Note 2) at VGE = 10V C C µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50W. Thermal Characteristics RθJC Thermal Resistance IGBT Thermal Resistance Diode 2.1 2.0 oC/W oC/W Package Marking and Ordering Information Part Number HGTP7N60C3D HGT1S7N60C3DS HGT1S7N60C3D Package TO-220AB TO-263AB TO-262 Brand G7N60C3D G7N60C3D G7N60C3D NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. 2 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVCES ICES IGES VCE(SAT) Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate-Emitter Leakage Current Collector to Emitter Saturation Voltage IC = 250µA, VGE = 0V 600 TC = 25oC TC = 150oC 1.6 1.9 250 2.0 ±250 2.0 2.4 V µA mA nA V V VCE = BVCES, TC = 25oC VCE = BVCES, TC = 150oC VGE = ±25V IC = IC110, VGE = 15V On Characteristics VGE(TH) Gate-Emitter Threshold Voltage IC = 250µA, VCE = VGE, TC = 25oC TJ = RG = 50Ω , VGE = 15V, L = 1mH 150oC, VCE(PK) = 480V VCE(PK) = 600V 3.0 40 60 5.0 8 6.0 V A A V SSOA VGEP Switching SOA Gate to Emitter Plateau Voltage IC = IC110, VCE = 0.5 BVCES Switching Characteristics td(ON)I trI td(OFF)I tfI EON EOFF QG(ON) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) On-State Gate Charge TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V R G = 5 0Ω L = 1mH VGE = 15V IC = IC110, VCE = 0.5 BVCES VGE = 20V 8.5 11.5 350 140 165 600 23 30 400 275 30 38 ns ns ns ns µJ µJ nC nC Drain-Source Diode Characteristics and Maximum Ratings VEC trr NOTES: 3.Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. Diode Forward Voltage Diode Reverse Recovery Time IEC = 7A IEC = 7A, dIEC/dt = 200A/µs IEC = 1A, dIEC/dt = 200A/µs - 1.9 25 18 2.5 37 30 V ns ns 3 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 40 DUTY CYCLE