HGTG40N60C3

HGTG40N60C3 D ata Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49273. Features • 75A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 100ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG40N60C3 PACKAGE TO-247 PKG. NO. G40N60C3 NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGTG40N60C3 Rev. B HGTG40N60C3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60C3 600 75 40 300 ±20 ±30 40A at 600V 291 2.33 100 -55 to 150 260 5 10 UNITS V A A A V V W W/oC mJ oC oC µs µs Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω . Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 15 3.1 VCE = 480V VCE = 600V 200 40 TYP 25 1.3 1.4 4.5 7.2 275 360 47 30 185 60 850 1.0 1.0 MAX 250 4.0 1.8 2.0 6.0 ±250 302 395 1.2 1.8 UNITS V V µA mA V V V nA A A V nC nC ns ns ns ns mJ mJ mJ Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 3Ω, VGE = 15V, L = 400µH Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 4) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 17) ©2001 Fairchild Semiconductor Corporation HGTG40N60C3 Rev. B HGTG40N60C3 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 17) MIN TYP 41 30 360 100 860 2.0 2.5 MAX 450 210 2.4 4 0.43 UNITS ns ns ns ns µJ mJ mJ oC/W Typical Performance Curves 80 ICE , DC COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 25 PACKAGE LIMIT Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 225 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, RG = 3Ω , VGE = 15V, L = 100µH 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE TJ = 150oC, RG = 3Ω , L = 1mH, V CE = 480V 100 TC 75oC 75oC 110oC 110oC VGE 15V 10V 15V 10V FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (µs) VCE = 360V, RG = 3Ω , TJ = 125oC ISC 16 625 10 12 500 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES 1 2 5 10 40 80 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 tSC 4 10 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V) 375 250 15 FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG40N60C3 Rev. B ISC , PEAK SHORT CIRCUIT CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) 20 750 HGTG40N60C3 Typical Performance Curves ICE , COLLECTOR TO EMITTER CURRENT (A) 300 250 200 TC = -55oC 150 TC = 25oC 100 50 0 0 1 2 3 4 5 6 7 VCE , COLLECTOR TO EMITTER VOLTAGE (V) DUTY CYCLE