HGTP14N36G3VL

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS December 2001 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175 C • Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. PACKAGING AVAILABILITY PART NUMBER HGTP14N36G3VL HGT1S14N36G3VL HGT1S14N36G3VLS PACKAGE TO-220AB TO-262AA TO-263AB BRAND 14N36GVL 14N36GVL 14N36GVL COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB COLLECTOR (FLANGE) GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE COLLECTOR NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S14N36G3VLS9A. The development type number for this device is TA49021. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 390 24 18 14 ±10 17 12 332 100 0.67 -40 to +175 260 6 Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 5V, TC = +100oC . . . . . . . . . . . . . . . . . . . . . . IC100 Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . ISCIS at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 2.3mH, T C = +25oC. . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA. ©2001 Fairchild Semiconductor Corporation UNITS V V A A V A A mJ W W/oC o C o C KV HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCER TEST CONDITIONS IC = 10mA, VGE = 0V RGE = 1kΩ TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau Voltage VGEP IC = 7A, VCE = 12V IC = 7A, VCE = 12V I C = 7A RG = 1000Ω IC = 10mA VCE = 250V RGE = 1kΩ TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC VGE = ±10V IGES = ±2mA IC = 7A, RL = 28Ω RG = 25Ω, L = 550µH, VCL = 300V, VGE = 5V, TC = +175oC L = 2.3mH, VG = 5V, TC = +175oC TC = +25oC MIN 320 330 320 TYP 355 360 350 2.7 MAX 400 390 385 UNITS V V V V Gate Charge QG(ON) - 24 - nC Collector-Emitter Clamp Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current BVCE(CL) 350 380 410 V BVECS ICER 24 1.3 28 1.25 1.15 1.6 1.7 1.8 25 250 1.45 1.6 2.2 2.9 2.2 V µA µA V V V V V Collector-Emitter Saturation Voltage VCE(SAT) I C = 7A VGE = 4.5V IC = 14A VGE = 5V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load R1 R2 IGES BVGES tD(OFF)I + tF(OFF)I 10 ±330 ±12 - 75 20 ±500 ±14 7 30 ±1000 - Ω kΩ µA V µs Inductive Use Test ISCIS 12 17 - - 1.5 o A A C/W Thermal Resistance RθJC ©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Typical Performance Curves PULSE DURATION = 250µs, DUTY CYCLE