HGTP14N40F3VL

HGTP14N40F3VL / HGT1S14N40F3VLS January 2002 HGTP14N40F3VL / HGT1S14N40F3VLS 330mJ, 400V, N-Channel Ignition IGBT General Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. Formerly Developmental Type 49023 Applications • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications Features • • • • • Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection Max TJ = 175oC SCIS Energy = 330mJ at TJ = 25oC Package JEDEC TO-263AB D² -Pak JEDEC TO-220AB E Symbol C G R1 GATE COLLECTOR G E COLLECTOR (FLANGE) COLLECTOR (FLANGE) EMITTER Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCES BVCGR ESCIS25 IC25 IC90 VGES VGEM ICO ICO PD TJ, TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Collector to Gate Breakdown Voltage (RGE = 10KΩ) Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25°C Collector Current Continuous, at TC = 25°C, VGE = 4.5V Collector Current Continuous, at TC = 90°C, VGE = 4.5V Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed L = 2.3mHy, TC = 25°C L = 2.3mHy, TC = 150°C Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating and Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100pF, 1500Ω Ratings 420 420 330 38 35 ±10 ±12 17 12 262 1.75 -40 to 175 300 260 6 Units V V mJ A A V V A A W W/°C °C °C °C KV ©2002 Fairchild Semiconductor Corporation HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS Package Marking and Ordering Information Device Marking 14N40FVL 14N40FVL 14N40FVL Device HGT1S14N40F3VLT HGT1S14N40F3VLS HGTP14N40F3VL Package TO-263AB TO-263AB TO-220AB Reel Size 24mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 units 50 units 50 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0 IC = 10A, RG = 0 IC = 1mA IGES = ±1mA VCE = 250V, VGE = ±10V TC = 25°C TC = 150°C IGES R1 Gate to Emitter Leakage Current Series Gate Resistance TC = 25°C TC = 150°C TC = 25°C TC = -40°C BVCE(CL) BVECS BVGES ICES Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current TC = 150°C TC = 25°C 345 350 355 350 24 ±12 370 375 380 385 1000 415 420 425 430 50 250 ±10 V V V V V V µA µA µA Ω On State Characteristics VCE(SAT) VGE(TH) Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage IC = 10A, VGE = 4.5V IC = 1mA, VCE = VGE T C = 25° C TC = 150°C T C = 25° C TC = 150°C 1.0 0.5 1.3 1.4 2.0 2.3 2.0 V V V V Switching Characteristics td(OFF)l + tf(OFF)l SCIS Current Turn-Off Time-Inductive Load IC = 6.5A, RG = 25Ω, L = 550µHy, VCL = 320V, VGE = 5V, TC = 25°C L = 2.3mHy, T C = 2 5° C VGE = 5V, See T = 150°C C Fig. 1 & 2 12 16 µs Self Clamped Inductive Switching 17 12 - - A A Thermal Characteristics RθJC Thermal Resistance Junction to Case 0.57 °C/W ©2002 Fairchild Semiconductor Corporation HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS Typical Performance Curves (Continued) ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 80 RG = 1kΩ, VGE = 5V, VDD = 14V 80 RG = 1kΩ, VGE = 5V, VDD = 14V 60 60 40 TJ = 25°C TJ = 150°C 20 40 TJ = 25°C 20 TJ = 150°C SCIS Curves valid for Vclamp Voltages of