HGTP3N60A4

HGT1S3N60A4DS, HGTP3N60A4D D ata Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49329. Features • >100kHz Operation At 390V, 3A • 200kHz Operation At 390V, 2.5A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER™ Model www.Fairchildsemi.com Packaging JEDEC TO-263AB G E COLLECTOR (FLANGE) Ordering Information PART NUMBER HGT1S3N60A4DS HGTP3N60A4D PACKAGE TO-263AB TO-220AB BRAND 3N60A4D 3N60A4D E C G JEDEC TO-220AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A. Symbol C COLLECTOR (FLANGE) G E Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B HGT1S3N60A4DS, HGTP3N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1S3N60A4DS HGTP3N60A4D 600 17 8 40 ±20 ±30 15A at 600V 70 0.58 -55 to 150 300 260 UNITS V A A A V V W W/oC oC oC oC Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications PARAMETER TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = 600V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 4.5 15 VGE = 15V VGE = 20V TYP 2.0 1.6 6.1 8.8 21 26 6 11 73 47 37 55 25 MAX 250 3.0 2.7 2.2 7.0 ±250 25 32 70 35 UNITS V µA mA V V V nA A V nC nC ns ns ns ns µJ µJ µJ Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 3A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP Qg(ON) IC = 250µA, VCE = 600V VGE = ±20V TJ = 150oC, RG = 50Ω, VGE = 15V, L = 200µH, VCE = 600V IC = 3A, VCE = 300V IC = 3A, VCE = 300V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IGBT and Diode at TJ = 25oC, ICE = 3A, VCE = 390V, VGE = 15V, RG = 50Ω , L = 1mH, Test Circuit (Figure 24) ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B HGT1S3N60A4DS, HGTP3N60A4D Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF VEC trr IEC = 3A IEC = 3A, dIEC/dt = 200A/µs IEC = 1A, dIEC/dt = 200A/µs Thermal Resistance Junction To Case RθJC IGBT Diode NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 125oC, ICE = 3A, VCE = 390V, VGE = 15V, RG = 50Ω , L = 1mH, Test Circuit (Figure 24) MIN TYP 5.5 12 110 70 37 90 50 2.25 29 19 MAX 8 15 165 100 100 80 1.8 3.5 UNITS ns ns ns ns µJ µJ µJ V ns ns oC/W oC/W Typical Performance Curves 20 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 20 TJ = 150oC, RG = 50Ω, VGE = 15V, L = 200µH 16 VGE = 15V 16 12 12 8 8 4 4 0 25 50 75 100 125 150 0 0 100 200 300 400 500 600 700 TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B HGT1S3N60A4DS, HGTP3N60A4D Typical Performance Curves 600 fMAX, OPERATING FREQUENCY (kHz) TC 75oC 300 200 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.8oC/W, SEE NOTES TJ = 125oC, RG = 50Ω, L = 1mH, V CE = 390V 1 2 3 4 5 6 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE 15V Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) VCE = 390V, RG = 50Ω, TJ = 125oC tSC 16 14 12 10 8 6 4 10 11 12 13 14 ISC 48 40 32 24 16 8 0 15 ISC, PEAK SHORT CIRCUIT CURRENT (A) 4 6 20 18 64 56 100 50 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 20 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs TJ = 125oC 20 16 TJ = 150oC DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs TJ = 125oC TJ = 150oC 16 12 12 8 8 4 TJ = 25oC 0 1 2 3 4 5 4 TJ = 25oC 0 0 0 1 2 3 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 240 EON2 , TURN-ON ENERGY LOSS (µJ) 200 160 120 80 40 0 EOFF , TURN-OFF ENERGY LOSS (µJ) RG = 50Ω , L = 1mH, VCE = 390V 140 120 100 80 60 40 20 0 RG = 50Ω, L = 1mH, VCE = 390V TJ = 125oC, VGE = 12V, VGE = 15V TJ = 125oC, VGE = 12V OR 15V TJ = 25oC, VGE = 12V, VGE = 15V 1 2 3 4 5 6 TJ = 25oC, VGE = 12V OR 15V 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B HGT1S3N60A4DS, HGTP3N60A4D Typical Performance Curves 16 td(ON)I, TURN-ON DELAY TIME (ns) RG = 50Ω, L = 1mH, VCE = 390V 28 12 TJ = 25oC, TJ = 125oC, VGE = 12V 8 trI , RISE TIME (ns) 24 20 16 12 8 0 4 TJ = 25oC OR TJ = 125oC, VGE = 15V TJ = 25oC OR TJ = 125oC, VGE = 12V Unless Otherwise Specified (Continued) 32 RG = 50Ω, L = 1mH, VCE = 390V 4 TJ = 25oC, TJ = 125oC, VGE = 15V 1 2 3 4 5 6 1 2 3 4 5 6 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 112 td(OFF)I , TURN-OFF DELAY TIME (ns) 104 96 88 80 72 VGE = 12V, TJ = 25oC 64 56 48 1 VGE = 15V, TJ = 25oC VGE = 12V, TJ = 125oC tfI , FALL TIME (ns) VGE = 15V, TJ = 125oC 96 88 RG = 50Ω, L = 1mH, VCE = 390V TJ = 125oC, VGE = 12V OR 15V 80 72 64 56 48 TJ = 25oC, VGE = 12V OR 15V 1 2 3 4 5 6 RG = 50Ω, L = 1mH, VCE = 390V 2 3 4 5 6 40 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 20 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 16 16 14 12 10 8 6 4 2 0 0 IG(REF) = 1mA, RL = 100Ω , TJ = 25oC VCE = 600V 12 8 VCE = 200V VCE = 400V TJ = 25oC TJ = 125oC 4 6 8 TJ = -55oC 10 12 14 4 0 4 8 12 16 20 24 28 VGE, GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B HGT1S3N60A4DS, HGTP3N60A4D Typical Performance Curves ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ) 250 Unless Otherwise Specified (Continued) ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ) RG = 50Ω , L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 1000 200 ICE = 4.5A 150 ICE = 3A 100 ICE = 1.5A TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 4.5A ICE = 3A 100 ICE = 1.5A 50 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 30 3 10 100 RG, GATE RESISTANCE (Ω) 1000 FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE VCE, COLLECTOR TO EMITTER VOLTAGE (V) 700 FREQUENCY = 1MHz 600 C, CAPACITANCE (pF) 500 400 CIES 300 CRES 200 100 0 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 ICE = 1.5A 8 10 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs ICE = 4.5A ICE = 3A COES 0 20 40 60 80 100 12 14 16 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 20 DUTY CYCLE < 0.5%, PULSE DURATION = 250µs IEC , FORWARD CURRENT (A) trr , RECOVERY TIMES (ns) 16 64 56 48 40 32 24 16 8 dIEC/dt = 200A/µs 125oC trr 12 125oC tb 25oC trr 125oC ta 8 125oC 25oC 4 25oC ta 1 2 3 25oC tb 4 5 6 0 0 1 2 3 4 5 0 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B HGT1S3N60A4DS, HGTP3N60A4D Typical Performance Curves 26 Unless Otherwise Specified (Continued) Qrr, REVERSE RECOVERY CHARGE (nc) 200 VCE = 390V 160 125oC, IEC = 3A IEC = 3A, VCE = 390V 125oC ta trr , RECOVERY TIMES (ns) 22 18 25oC ta 14 125oC tb 120 125oC, IEC = 1.5A 25oC, IEC = 20A 25oC, IEC = 10A 80 10 25oC tb 6 200 400 600 800 1000 40 0 200 400 600 800 1000 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT ZθJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-1 100 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% E0N2 L = 1mH RG = 50Ω DUT + VCE VDD = 390V td(OFF)I tfI ICE 90% 10% td(ON)I trI EOFF ICE - FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B HGT1S3N60A4DS, HGTP3N60A4D Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by: PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4