IRF520A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) Ο IRF520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο Ο Ο Value 100 9.2 6.5 1 O 2 O 1 O 1 O 3 O Units V A A V mJ A mJ V/ns W W/ C Ο 37 + 20 _ 113 9.2 4.5 6.5 45 0.3 - 55 to +175 Ο C 300 Thermal Resistance Symbol R θ JC R θ CS R θ JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.31 -62.5 Ο Units C /W Rev. B ©1999 Fairchild Semiconductor Corporation IRF520A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage TJBreakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 100 -2.0 -----------------0.12 ------6.35 370 95 38 14 14 36 28 16 2.7 7.8 --4.0 100 -100 10 100 0.2 -480 110 45 40 40 90 70 22 --nC ns pF µA Ω Ω V Test Condition VGS=0V,ID=250 µ A See Fig 7 V/ C ID=250µ A VDS=5V,ID=250 µ A V Ο nA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=4.6A VDS=40V,ID=4.6A 4 O 4 O Ο VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, RG=18Ω See Fig 13 VDS=80V,VGS=10V, ID=9.2A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------98 0.34 9.2 37 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=9.2A,VGS=0V TJ=25 C ,IF=9.2A diF/dt=100A/ µ s 4 O Ο Ο 1 O 2 O 3 O 4 O 5 O Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature o L=2mH, IAS=9.2A, V DD=25V, R G=27Ω , Starting T J =25 C _ < 300A/µs, V DD < BVDSS , Starting T J =25 oC ISD < 9.2A, di/dt _ _ _ Pulse Test : Pulse Width = 250 µ Duty Cycle