IRF550

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRF550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 100 40 28.3 1 O Ο Units V A A V mJ A mJ V/ns W W/ C Ο Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Ο 160 + 20 _ 640 40 16.7 6.5 167 1.11 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο C 300 Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.9 -62.5 Ο Units C /W Rev. B ©1999 Fairchild Semiconductor Corporation IRF550A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------27.44 420 185 17 20 80 45 75 13.2 34.8 --4.0 100 -100 10 100 0.04 -485 215 50 50 160 100 97 --nC ns µA Ω Ω pF V V/ C V nA Ο Test Condition VGS=0V,ID=250 µA ID=250µ A See Fig 7 VDS=5V,ID=250 µA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=20A VDS=40V,ID=20A 4 O 4 O Ο 1750 2270 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=40A, RG=6.2 Ω See Fig 13 VDS=80V,VGS=10V, ID=40A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------135 0.65 40 160 1.6 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=40A,VGS=0V TJ=25 C ,IF=40A diF/dt=100A/ µs 4 O Ο Ο Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=0.6mH, I AS=40A, VDD=25V, RG=27Ω , Starting T J =25ooC 3 _ _ _ O ISD < 40A, di/dt < 470A/ µs, VDD< BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle