IRF640A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω(Typ.) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 18 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o Value 200 18 11.4 72 + 30 _ 216 18 13.9 5.0 139 1.11 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC Rθ CS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.9 -62.5 o Units C/W Rev. B ©1999 Fairchild Semiconductor Corporation IRF640A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 200 -2.0 -----------------0.26 ------9.61 210 94 17 16 48 24 44 10.4 27.1 --4.0 100 -100 10 100 0.18 -250 110 40 40 110 60 58 --nC ns µA Ω Ω pF V V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=200V VDS=160V,TC=125 C VGS=10V,ID=9A VDS=40V,ID=9A 4 O 4 O o o V/ C ID=250 µA 1160 1500 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=18A, RG=9.1 Ω See Fig 13 VDS=160V,VGS=10V, ID=18A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------195 1.35 18 72 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25oC,IS=18A,VGS=0V TJ=25oC ,IF=18A diF/dt=100A/µ s 4 O O 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=1mH, I AS=18A, VDD=50V, RG=27Ω, Starting T J =25 oC 3 _ _ _ O ISD < 18A, di/dt