IRFS510A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) 1 Ο IRFS510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 4.5 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο Ο Ο Value 100 4.5 3.2 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 20 + 20 _ 54 4.5 2.1 6.5 21 0.14 - 55 to +175 O 1 O 1 O 3 O 2 Ο C 300 Thermal Resistance Symbol Rθ JC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 6.98 62.5 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation IRFS510A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 Cunless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------3.29 190 55 21 10 14 28 18 8.5 1.6 4.1 --4.0 100 -100 10 100 0.4 -240 65 25 30 40 70 50 12 --nC ns pF µA Ω Ω V Ο Test Condition VGS=0V,ID=250 µ A See Fig 7 VDS=5V,ID=250 µ A VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C Ο V/ C ID=250 µ A V nA VGS=10V,ID=2.25A VDS=40V,ID=2.25A 4 O 4 O VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=5.6A, RG=24 Ω See Fig 13 VDS=80V,VGS=10V, ID=5.6A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------85 0.23 4.5 20 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=4.5A,VGS=0V TJ=25 C,IF=5.6A diF/dt=100A/ µ s 4 O Ο Ο Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=4mH, I AS=5.6A, VDD=25V, RG=27Ω , Starting T J =25oC o 3 _ _ _ O ISD < 5.6A, di/dt < 250A/ µs, V DD < BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle