IRFS630A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 1 IRFS630A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 6.5 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o Value 200 6.5 4.1 36 + 30 _ 141 6.5 3.8 5.0 38 0.3 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/ C o O 1 O 1 O 3 O 2 o C Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 3.33 62.5 Units o C/W Rev. B ©1999 Fairchild Semiconductor Corporation IRFS630A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 200 -2.0 -----------------0.21 ------3.58 500 95 45 13 13 30 18 22 4.3 10.9 --4.0 100 -100 10 100 0.4 -650 110 55 40 40 70 50 29 --nC ns pF µA Ω Ω V V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250 µA VGS=30V VGS=-30V VDS=200V VDS=160V,TC=125 C VGS=10V,ID=3.25A VDS=40V,ID=3.25A 4 O 4 O o o V/ C ID=250 µA VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=9A, RG=12 Ω See Fig 13 VDS=160V,VGS=10V, ID=9A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------137 0.68 6.5 36 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25oC,IS=6.5A,VGS=0V TJ=25oC ,IF=9A diF/dt=100A/µ s 4 O O 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=5mH, I AS=6.5A, VDD=50V, RG=27Ω, Starting T J =25ooC 3 _ _ _ O ISD < 9A, di/dt