IRFU230A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) IRFR/U230A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 7.5 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC ) * Total Power Dissipation (TC=25oC ) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o o Value 200 7.5 4.8 30 + 30 _ 150 7.5 5 5.0 2.5 50 0.4 - 55 to +150 Units V A A V mJ A mJ V/ns W W W/ C o O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 2.5 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation IRFR/U230A Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 200 -2.0 -----------------0.21 ------3.73 500 95 45 13 13 30 18 22 4.3 10.9 --4.0 100 -100 10 100 0.4 -650 110 55 40 40 70 50 29 --nC ns pF µA Ω Ω V V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=250 µA See Fig 7 VDS=5V,ID=250 µA VGS=30V VGS=-30V VDS=200V VDS=160V,TC=125 C VGS=10V,ID=3.75A VDS=40V,ID=3.75A 4 O 4 O o o V/ C ID=250 µA VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=9A, RG=12Ω See Fig 13 VDS=160V,VGS=10V, ID=9A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------137 0.68 7.5 30 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25oC,IS=7.5A,VGS=0V TJ=25oC,IF=9A diF/dt=100A/µ s 4 O O 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=4mH, I AS=7.5A, VDD=50V, RG=27Ω , Starting T J =25 oC 3 _ _ _ O ISD< 9A, di/dt < 220A/ µs, VDD