IRFW540

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.041 Ω (Typ.) IRFW/I540A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25℃) * Total Power Dissipation (TC=25℃) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds ② ① ① ③ ① Value 100 28 19.8 110 ±20 523 28 10.7 6.5 3.8 107 0.71 - 55 to +175 Units V A A V mJ A mJ V/ns W W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.4 40 62.5 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount). Rev. B1 2001 Fairchild Semiconductor Corporation 1 IRFW/I540A Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(밠iller? Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------22.56 325 148 18 18 90 56 60 10.8 27.9 --4.0 100 -100 10 100 0.052 -380 170 50 50 180 120 78 --nC ns μA Ω S pF V V/℃ V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Test Condition VGS=0V,ID=250μA ID=250μA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150℃ VGS=10V,ID=14A VDS=40V,ID=14A ④ ④ See Fig 7 VDS=5V,ID=250μA 1320 1710 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=28A, RG=9.1Ω See Fig 13 VDS=80V,VGS=10V, ID=28A See Fig 6 & Fig 12 ④ ⑤ ④⑤ Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ① ④ Min. Typ. Max. Units --------132 0.63 28 110 1.5 --A V ns μC Test Condition Integral reverse pn-diode in the MOSFET TJ=25℃,IS=28A,VGS=0V TJ=25℃,IF=28A diF/dt=100A/μs ④ Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=1mH, IAS=28A, VDD=25V, RG=27Ω, Starting TJ =25℃ ③ ISD≤28A, di/dt≤400A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature 2 N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 12 0 Top : VGS 15V 10 V 8.0 V 7.0 V 6.0 V 5.5V 5.0 V Bottom : 4.5V IRFW/I540A Fig 2. Transfer Characteristics 12 0 ID , Drain Current [A] ID , Drain Current [A] 1 5 oC 7 11 0 11 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =4 V . DS 0 us et 3 2 0 µs P l e T s .5 6 8 1 0 1 0 0 @Nts: oe 1 2 0 µs P l e T s .5 us et 2 T = 2 oC .C 5 10 0 11 0 - 5 oC 5 10 0 1 -1 0 2 4 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 00 .8 12 0 Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 00 .6 V =1 V 0 GS 00 .4 11 0 V =2 V 0 GS 00 .2 @Nt :T =2 C oe J 5 00 .0 0 3 0 6 0 9 0 10 2 o 1 5 oC 7 2 oC 5 10 0 04 . 06 . 08 . 10 . 12 . 14 . @Nts: oe 1 V =0V . GS us et 2 2 0 µs P l e T s .5 16 . 18 . 20 . 22 . 24 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 20 50 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd Fig 6. Gate Charge vs. Gate-Source Voltage V =2 V 0 DS V =5 V 0 DS V =8 V 0 DS 20 00 1 0 10 50 C oss 10 00 C rss 50 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H VGS , Gate-Source Voltage [V] C iss Capacitance [pF] 5 @Nts:I =80A oe D 2. 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 00 1 0 11 0 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] 3 IRFW/I540A Fig 7. Breakdown Voltage vs. Temperature 12 . 30 . N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature BVDSS , (Normalized) Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 25 . 20 . 10 . 15 . 10 . @Nts: oe 1 V =1 V . GS 0 2 I =1. A . D 40 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 20 0 09 . @Nts: oe 1 V =0V . GS 2 I = 2 0 µA .D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 20 0 05 . 08 . -5 7 00 . -5 7 TJ , Junction Temperature [oC] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area 13 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y Fig 10. Max. Drain Current vs. Case Temperature 3 0 ID , Drain Current [A] 2 5 1 µs 0 1 0 µs 0 1m s 12 0 ID , Drain Current [A] 2 0 11 0 D C 1m 0s 1 5 1 0 10 0 @Nts: oe 1 T = 2 oC .C 5 2 T = 1 5 oC .J 7 3 Snl Ple . ige us 5 1 -1 0 0 1 0 11 0 12 0 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response 100 D=0.5 @ Notes : 1. Zθ J C (t)=1.4 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) PDM 0.2 0.1 10- 1 0.05 0.02 0.01 Z JC (t) , single pulse t1 t2 θ 10- 2 - 5 10 10- 4 10- 3 10- 2 10- 1 100 101 t1 , Square Wave Pulse Duration [sec] 4 N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform IRFW/I540A * Current Regulator ” 50KΩ 12V 200nF 300nF Same Type as DUT VGS Qg 10V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 10V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 10V tp ID (t) VDS (t) Time 5 IRFW/I540A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD • dv/dt controlled by 밨G • IS controlled by Duty Factor 밆? VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4