IRFW740A

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.437Ω (Typ.) IRFW/I740A BVDSS = 400 V RDS(on) = 0.55Ω ID = 1 0 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 400 10 6.3 40 ±30 457 10 13.4 4.0 3.1 134 1.08 - 55 to +150 Units V A A V mJ A mJ V/ns W W W/°C °C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 0.93 40 62.5 °C/W Units * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation IRFW/I740A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 400 -2.0 -----------------0.50 ------7.78 175 80 18 21 78 28 58 8.1 31.3 --4.0 100 -100 10 100 0.55 -205 95 50 55 170 65 75 --nC ns µA Ω Ω V V nA 1&+$11(/ 32:(5 026)(7 Test Condition VGS=0V,ID=250µA V/° C ID=250µA VGS=30V VGS=-30V VDS=400V See Fig 7 VDS=5V,ID=250µA VDS=320V,TC=125 VGS=10V,ID=5A VDS=50V,ID=5A (4) (4) 1180 1530 pF VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=200V,ID=10A, RG=9.1Ω See Fig 13 VDS=320V,VGS=10V, ID=10A (4) (5) See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge (1) (4) Min. Typ. Max. Units --------315 2.84 10 40 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25°C,IS=10A,VGS=0V TJ=25°C,IF=10A diF/dt=100A/µs (4) Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=8mH, IAS=10A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 10A, di/dt ≤ 170A/µ s, VDD ≤ BV DSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µ s, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature 1&+$11(/ 32:(5 026)(7 Fig 1. Output Characteristics VGS Top : 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V IRFW/I740A Fig 2. Transfer Characteristics ID , Drain Current [A] ID , Drain Current [A] 11 0 11 0 1 0 oC 5 10 0 2 oC 5 @N ts : oe 1 V =0 V . GS 2 V =5 V . DS 0 us et 3 2 0 µs P l e T s .5 6 8 1 0 10 0 @ Nt s: oe 1 2 0 µs P l e T s .5 us et 2 T = 2 oC .C 5 1 -1 -1 0 1 0 10 0 11 0 - 5 oC 5 1 -1 0 2 4 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 12 . Fig 4. Source-Drain Diode Forward Voltage IDR , R rs D in Cu ent [A] eve e ra rr RDS(on) , [ Ω ] Dr Sour O sis e ain- ce n-Re tanc 09 . 11 0 V =1 V 0 GS 06 . 10 0 @N ts : oe 1 V =0 V . GS 2 2 0 µs P l e T s .5 us et 08 . 10 . 12 . 14 . V =2 V 0 GS 03 . @ Nt :T =2 C oe J 5 00 . 0 1 0 2 0 3 0 4 0 o 1 0 oC 5 2C 5 1 -1 0 02 . 04 . 06 . o I , Dra C nt [A] in urre D Fig 5. Capacitance vs. Drain-Source Voltage 20 00 C = C + C (C = so td ) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 10 50 VSD , S ce ai Vol ge [ our -Dr n ta V] Fig 6. Gate Charge vs. Gate-Source Voltage V =8 V 0 DS 1 0 Capacitance [pF] C iss VGS , Gate-Source Voltage [V] V =2 0V 0 DS V =3 0V 2 DS 10 00 @ Nt s: oe 1 V =0 V . GS 2 f =1 M z . H 5 C oss 50 0 C rss @N ts :I =1 . A oe 00 D 0 0 1 0 2 0 3 0 4 0 5 0 6 0 00 1 0 1 0 1 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] IRFW/I740A Fig 7. Breakdown Voltage vs. Temperature 12 . 30 . 1&+$11(/ 32:(5 026)(7 Fig 8. On-Resistance vs. Temperature BVDSS , (Normalized) Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 25 . 20 . 10 . 15 . 10 . @N ts : oe 1 V =1 V . GS 0 2 I =5 0A .D . -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 09 . @ Nt s: oe 1 V =0 V . GS 2 I = 2 0 µA .D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 o 05 . 08 . -5 7 15 2 10 5 15 7 00 . -5 7 TJ , Junction Temperature [ C] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area O ea in i T i Ae pr to n hs ra i L m t d b R DS(on) s i ie y 1 0 µs 0 1m s 1m 0s D C 10 0 @ Nt s: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Sn l P le . ig e u s 1 -2 0 0 1 0 11 0 12 0 13 0 1 µs 0 Fig 10. Max. Drain Current vs. Case Temperature 1 2 12 0 ID , Drain Current [A] ID , Drain Current [A] 1 0 11 0 8 6 4 1 0 -1 2 0 2 5 5 0 7 5 10 0 15 2 10 5 VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response 100 D=0.5 0.2 10 -1 0.1 0.05 @ Notes : 1. Zθ J C (t)=0.93 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) PDM Z JC(t) , 0.02 0.01 single pulse θ t1 t2 10- 2 - 5 10 10 -4 10 -3 10 -2 10 -1 100 101 t1 , Square Wave Pulse Duration [sec] 1&+$11(/ 32:(5 026)(7 Fig 12. Gate Charge Test Circuit & Waveform IRFW/I740A Current Regulator 50kΩ 12V 200nF 300nF Same Type as DUT VGS Qg 10V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 10V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 10V tp ID (t) VDS (t) Time IRFW/I740A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 1&+$11(/ 32:(5 026)(7 DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD dv/dt controlled by RG IS controlled by Duty Factor D VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.