IRL530

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.) IRL530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds ② ① ① ③ ① Value 100 14 9.9 49 ±20 261 14 6.2 6.5 62 0.41 - 55 to +175 Units V A A V mJ A mJ V/ns W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 2.41 -62.5 ℃/W Units Rev. B1 IRL530A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(＂Miller＂) Charge Min. Typ. Max. Units 100 -1.0 -----------------0.1 ------10.2 --2.0 100 -100 10 100 0.12 -μA Ω Ω V V/℃ V nA N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250μA ID=250μA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150℃ VGS=5V,ID=7A VDS=40V,ID=7A ④ ④ See Fig 7 VDS=5V,ID=250μA 580 755 140 175 60 10 11 29 15 16.9 2.7 9.7 75 30 30 70 40 24 --nC ns pF VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=14A, RG=6Ω See Fig 13 VDS=80V,VGS=5V, ID=14A See Fig 6 & Fig 12 ④ ⑤ ④⑤ Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ① ④ Min. Typ. Max. Units --------109 0.41 14 49 1.5 --A V ns μC Test Condition Integral reverse pn-diode in the MOSFET TJ=25℃,IS=14A,VGS=0V TJ=25℃,IF=14A diF/dt=100A/μs ④ Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=2mH, IAS=14A, VDD=25V, RG=27Ω, Starting TJ =25℃ ③ ISD≤14A, di/dt≤350A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 12 0 VGS Top : 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V IRL530A Fig 2. Transfer Characteristics ID , Drain Current [A] ID , Drain Current [A] 11 0 11 0 1 5 oC 7 10 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =4 V . DS 0 3 2 0 µs P l e T s .5 us et 4 6 8 1 0 10 0 1 -1 0 10 0 @Nts: oe 1 2 0 µs P l e T s .5 us et 2 T = 2 oC .C 5 11 0 - 5 oC 5 1 -1 0 0 2 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 02 .0 Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 01 .5 V =5V GS 11 0 01 .0 V =1 V 0 GS 00 .5 @ N t : T = 2 oC oe J 5 00 .0 0 1 5 3 0 4 5 6 0 10 0 @Nts: oe 1 V =0V . GS us et 2 2 0 µs P l e T s .5 10 . 12 . 14 . 16 . 18 . 20 . 22 . 1 5 oC 7 2 oC 5 1 0 -1 04 . 06 . 08 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 10 00 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 6 Fig 6. Gate Charge vs. Gate-Source Voltage VGS , Gate-Source Voltage [V] 80 0 C iss V =2 V 0 DS V =5 V 0 DS V =8 V 0 DS 4 Capacitance [pF] 60 0 C oss 40 0 C rss 20 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H 2 @Nts:I =1 A oe 4 D 0 0 3 6 9 1 2 1 5 1 8 00 1 0 11 0 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] IRL530A Fig 7. Breakdown Voltage vs. Temperature 12 . 30 . N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 25 . BVDSS , (Normalized) 20 . 10 . 15 . 10 . @Nts: oe 1 V =5V . GS 2 I =7A .D -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 20 0 09 . @Nts: oe 1 V =0V . GS D 05 . 2 I = 2 0 µA . 5 08 . -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 o 10 5 15 7 20 0 00 . -5 7 TJ , Junction Temperature [ C] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Oeaini Ti Ae prto n hs ra i Lmtdb R s iie y Fig 10. Max. Drain Current vs. Case Temperature 1 5 12 0 ID , Drain Current [A] ID , Drain Current [A] 12 0 DS(on) 1 2 1 0 µs 0 1m s 11 0 D C 0 9 1m 0s 6 1 0 @Nts: oe 1 T = 2 oC . 5 C J 7 2 T = 1 5 oC . 3 Snl Ple . ige us 1 -1 0 0 1 0 11 0 3 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response 100 D=0.5 @ Notes : 1. Z J C (t)=2.41 θ 0.2 0.1 0.05 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z PDM t1 θJC (t) Z (t) , 10- 1 0.02 0.01 single pulse θJC t2 10- 5 10- 4 10- 3 10- 2 10- 1 100 101 t 1 , S quare Wave Pulse Duration [sec] N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform IRL530A * Current Regulator ” 50KΩ 12V 200nF 300nF Same Type as DUT VGS Qg 10V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 10V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 5V tp ID (t) VDS (t) Time IRL530A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N-CHANNEL POWER MOSFET DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD • dv/dt controlled by ＂RG＂ • IS controlled by Duty Factor ＂D＂ VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H7