$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.145Ω (Typ.)
IRL640A
BVDSS = 200 V RDS(on) = 0.18Ω ID = 1 8 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)
Value 200 18 11.4 63 ±20 64 18 11 5 110 0.88 - 55 to +150
Units V A A V mJ A mJ V/ns W W/°C
°C 300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.14 -62.5 °C/W Units
Rev. B
©1999 Fairchild Semiconductor Corporation
1
IRL640A
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 200 -1.0 -----------------0.17 ------13.3 200 95 11 8 46 15 40 6.8 18.6 --2.0 100 -100 10 100 0.18 -250 120 30 25 100 40 56 --nC ns µA Ω Ω V V nA
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Test Condition VGS=0V,ID=250µA
V/° C ID=250µA VGS=20V VGS=-20V VDS=200V
See Fig 7
VDS=5V,ID=250µA
VDS=160V,TC=125°C VGS=5V,ID=9A VDS=40V,ID=9A
(4) (4)
1310 1705 pF
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=100V,ID=18A, RG=4.6Ω
See Fig 13
VDS=160V,VGS=5V, ID=18A
(4) (5)
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
(1) (4)
Min. Typ. Max. Units --------224 1.55 18 63 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25°C,IS=18A,VGS=0V TJ=25°C,IF=18A diF/dt=100A/µs
(4)
Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=0.3mH, IAS=18A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 18A, di/dt ≤ 260A/µ s, VDD ≤ BV DSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µ s, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
2
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Fig 1. Output Characteristics
V Top :
GS
IRL640A
Fig 2. Transfer Characteristics
7.0 V 6.0 V 5.0 V
ID , Drain Current [A]
ID , Drain Current [A]
5.5 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V
11 0 1 0 oC 5
1 0
1
10 0
2 oC 5
10 0
@ Nt s: oe 1 2 0 µs P l e T s .5 us et 2 T = 2 oC .C 5 10 0 11 0
- 5 oC 5 1 -1 0 0 2 4
@ Nt s: oe 1 V =0 V . GS 2 V =4 V . DS 0 3 2 0 µs P l e T s .5 us et 6 8 1 0
1 -1 0
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
04 .
Fig 3. On-Resistance vs. Drain Current
IDR , Reverse Drain Current [A]
Fig 4. Source-Drain Diode Forward Voltage
Drain-Source On-Resistance
03 .
V =5V
GS
RDS(on) , [ Ω ]
11 0
02 .
10 0 1 0 oC 5 2 oC 5 1 -1 0 04 . 06 . 08 . 10 . 12 . @ Nt s: oe 1 V =0 V . GS us et 2 2 0 µs P l e T s .5 14 . 16 . 18 . 20 .
01 .
V =1 V 0 GS @Nt :T =2 C oe J 5
o
00 . 0
2 0
D
4 0
6 0
8 0
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
20 00 C iss C = C + C (C = s o t d ) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 6
Fig 6. Gate Charge vs. Gate-Source Voltage
VGS , Gate-Source Voltage [V]
10 60
V =4 V 0 DS V =1 0 V 0 DS 4 V =1 0 V 6 DS
Capacitance [pF]
10 20
80 0
C oss
40 0
C rss
@Nts: oe 1 V =0V . GS 2 f=1Mz . H
2
@ Nt s: I =1 A oe 8 D 0 0 1 0 2 0 3 0 4 0
0 10 0
1 0
1
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
3
IRL640A
Fig 7. Breakdown Voltage vs. Temperature
12 . 20 .
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Fig 8. On-Resistance vs. Temperature
Drain-Source Breakdown Voltage
BVDSS , (Normalized)
11 .
RDS(on) , (Normalized) Drain-Source On-Resistance
15 .
10 .
10 .
09 .
@ Nt s: oe 1 V =0 V . GS 2 I = 2 0 µA .D 5
05 .
@ Nt s: oe 1 V = 5V . GS 2 I = 9A .D -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7
08 . -5 7
-0 5
-5 2
J
0
2 5
5 0
7 5
10 0
15 2
10 5
15 7
00 . -5 7
T , Junction Temperature [oC]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
12 0 O ea in i Ti Ae pr t o n h s r a i L m t d b R DS(on) s i ie y
Fig 10. Max. Drain Current vs. Case Temperature
2 0
ID , Drain Current [A]
ID , Drain Current [A]
1 5
1 0 µs 0 1m s 11 0 D C @ Nt s: oe 5 1 T = 2 oC .
C
1m 0s
1 0
10 0
5
2 T = 1 0 oC .J 5 3 S nl Pl e . ig e us 1 -1 0 0 1 0
DS
11 0
12 0
0 2 5
5 0
c
7 5
10 0
15 2
10 5
V , Drain-Source Voltage [V]
T , Case Temperature [oC]
Fig 11. Thermal Response
Thermal Response
100 D=0.5 @ Notes : 1. Z J C (t)=1.14 o C/W Max.
θ
0.2 10- 1 0.1 0.05
2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z
PDM t1 t2
θ JC
(t)
Z (t) ,
0.02 0.01
θJC
single pulse
10- 2 - 5 10
10- 4
10- 3
10- 2
10- 1
100
101
t
1
, Square Wave Pulse Duration
[sec]
4
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Fig 12. Gate Charge Test Circuit & Waveform
IRL640A
Current Regulator
50kΩ 12V 200nF 300nF
Same Type as DUT
VGS Qg
5V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT Vin 5V
td(on) t on tr td(off) t off tf 10%
Vout VDD
( 0.5 rated VDS )
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 5V
tp
ID (t) VDS (t) Time
5
IRL640A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
dv/dt controlled by RG IS controlled by Duty Factor D
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
5V
IFM , B ody Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
6
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