J177

J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G D S G TO-92 D SOT-23 Mark: 6W / 6X / 6Y S P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value - 30 30 50 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J174 - J177 350 2.8 125 357 Max *MMBFJ175 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J174-177, Rev. A J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS B(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = 1.0 µ A, VDS = 0 VGS = 20 V, VDS = 0 VDS = - 15 V, ID = - 10 nA J174 J175 J176 J177 5.0 3.0 1.0 0.8 30 1.0 10 6.0 4.0 2.5 V nA V V V V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = - 15 V, IGS = 0 J174 J175 J176 J177 J174 J175 J176 J177 - 20 - 7.0 - 2.0 - 1.5 - 100 - 60 - 25 - 20 85 125 250 300 mA mA mA mA Ω Ω Ω Ω rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Characteristics Common Drain-Source -20 - DRAIN CURRENT (mA) T A = 25°C TYP V GS(off) = 4.5 V Parameter Interactions - TRANSCONDUCTANCE (mmhos) 100 50 r DS I DSS g fs r DS 1,000 500 - DRAIN "ON" RESISTANCE (Ω) -16 V GS = 0 V 0.5 V -12 -8 1.0 V 1.5 V 2.0 V 10 5 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 µA 100 50 I D -4 0 2.5 V 3.0 V 3.5 V fs g 1 0 -1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V) -5 1 V GS (OFF) 10 2 5 10 - GATE CUTOFF VOLTAGE (V) J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Typical Characteristics (continued) Transfer Characteristics -32 I D - DRAIN CURRENT (mA) - DRAIN CURRENT (mA) V DS = - 15 V V GS(off) = - 4.5 V Transfer Characteristics 16 V DS = - 15 V VGS(off) = - 4.5 V - 55°C 25°C 125°C VGS(off) = 2.5 V - 55°C 25°C 125°C -24 - 55°C 25°C 125°C 12 -16 VGS(off) = 2.5 V - 55°C 25°C 125°C 8 -8 4 0 I 0 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 0 0 D 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) V GS(off) @ 5.0V, 10 µA g os - OUTPUT CONDUCTANCE ( µ mhos) Normalized Drain Resistance vs Bias Voltage - NORMALIZED RESISTANCE Output Conductance vs Drain Current f = 1.0 kHz -5.0V -5.0V 1000 r DS r DS = V GS 1 -________ V GS(off) 100 V GS(off) = - 4.5V -10V -20V -20V -10V 10 V GS(off) = - 2.5V DS _ 1 0.01 r _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 g fs - TRANSCONDUCTANCE (mmhos) Transconductance vs Drain Current C is (C rs ) - CAPACITANCE (pF) Capacitance vs Voltage 100 f = 0.1 - 1.0 MHz 10 V GS(off) = 2.5V 5 25°C V GS(off) = 6.0V 1 0.5 V DG = -15V f = 1.0 kHz - 55°C 25°C 125°C 10 5 C is (V DS = -15V) C rs (V DS = -15V) 0.1 _ 0.1 ID _ 1 10 - DRAIN CURRENT (mA) _ _ 100 1 0 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 20 J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Typical Characteristics (continued) Noise Voltage vs Frequency r DS - DRAIN "ON" RESISTANCE (Ω ) 100 e n - NOISE VOLTAGE (nV / √ Hz) 50 I D = - 0.2 mA Channel Resistance vs Temperature 1000 500 V GS(off) = 2.5V V GS(off) = 4.5V V GS(off) = 8.0V V DS = -100 mV V GS = 0 10 5 I D = 5.0 mA 100 50 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz 1 0.01 0.1 1 10 f - FREQUENCY (kHz) 100 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 TO-92 SOT-23 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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