J212

J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range 5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J210-212 350 2.8 125 357 Max *MMBFJ210-212 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J210/J211/J212/MMBFJ210/J211/J212, Rev A J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V (BR)GSS IG S S V GS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage I G = 1 .0 µ A, V DS = 0 V G S = 1 5 V, V D S = 0 V D S = 1 5 V, I D = 1 .0 nA 210 2 11 212 - 25 - 100 -1.0 - 2.5 - 4.0 -3.0 - 4.5 - 6.0 V pA V V V ON CHARACTERISTICS ID S S Zero-Gate Voltage Drain Current* V DS = 15 V, V GS = 0 210 211 212 2.0 7.0 15 15 20 40 mA mA mA SMALL SIGNAL CHARACTERISTICS g fs Common Source Forward Transconductance V D S = 1 5 V, V G S = 0 , f = 1.0 kHz 210 211 212 V D S = 1 5 V, V G S = 0 , f = 1.0 kHz 4000 6000 7000 12,000 12,000 12,000 200 µ mhos µ mhos µ mhos µ mhos g oss Common Source Output Conductance *Pulse Test: Pulse Width ≤ 300 µS Typical Characteristics Parameter Interactions Common Drain-Source J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical Characteristics (continued) Transfer Characteristics Transfer Characteristics Leakage Current vs. Voltage Noise Voltage vs. Frequency 5 Transconductance vs. Drain Current Output Conductance vs. Drain Current J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical Characteristics (continued) Capacitance vs. Voltage Common Source Characteristics Input Admittance os) Forward Transadmittance Output Admittance Reverse Transadmittance J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Common Gate Characteristics Input Admittance Forward Transadmittance Output Admittance Reverse Transadmittance 5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET  VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2