J304

J304

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    J304 - N-Channel RF Amplifier - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
J304 数据手册
J304 J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. 1 TO-92 1. Drain 2. Source 3. Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Ratings 30 -30 10 -55 ~ 150 Units V V mA °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)GSS IGSS VGS(off) IDSS gfs goss Parameter Test Condition IG = -1.0µA, VDS = 0 VGS = -20V, VDS = 0 VDS = 15V, ID = 1.0nA VDS = 15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1KHz VGS= 0V, VDS = 15V, f = 1KHz -2.0 5.0 4500 Min. -30 -100 -6.0 15 7500 50 Typ. Max. Units V pA V mA µS µS Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transconductance Output Conductance On Characteristics Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/°C °C/W °C/W * Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06” ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 J304 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1
J304
1. 物料型号: - 型号为J304,由Fairchild Semiconductor生产。

2. 器件简介: - J304是一款N-Channel RF放大器,设计用于电子开关应用,例如低ON电阻模拟开关。

3. 引脚分配: - 1. Drain(漏极) - 2. Source(源极) - 3. Gate(栅极)

4. 参数特性: - 绝对最大额定值:包括Drain-Gate Voltage(漏极-栅极电压)为30V,Gate-Source Voltage(栅源电压)为-30V,Forward Gate Current(正向栅极电流)为10mA,以及Operating and Storage Junction Temperature Range(工作和存储结温范围)为-55至150摄氏度。

5. 功能详解: - 电气特性:包括Off Characteristics(关断特性)和On Characteristics(导通特性),具体参数包括Gate-Source Breakdown Voltage(栅源击穿电压)、Gate Reverse Current(栅极反向电流)、Gate-Source Cutoff Voltage(栅源截止电压)、Zero-Gate Voltage Drain Current(零栅极电压漏极电流)、Forward Transconductance(正向跨导)和Output Conductance(输出导纳)。 - 热特性:包括Total Device Dissipation(总器件耗散功率)为350mW,以及Thermal Resistance, Junction to Case(结到外壳热阻)和Thermal Resistance, Junction to Ambient(结到环境热阻)。

6. 应用信息: - 该器件适用于需要低ON电阻模拟开关的电子开关应用。

7. 封装信息: - 封装类型为TO-92,具体尺寸为:4.58±0.20mm(长度),1.27±0.20mm(宽度),0.46±0.10mm(高度)。

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