KSA1150

KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -20 -5 -500 -700 300 150 -55 ~ 150 Units V V V mA mA mW °C °C * PW≤350ms, Duty cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -25V, IE=0 VEB= -3V, IC=0 VCE= -1V, IC= -100mA IC= -500mA, IB= -50mA IC= -500mA, IB= -50mA 40 -0.3 -1.0 Min. -40 -20 -5 -100 -100 400 -0.4 -1.3 V V Typ. Max. Units V V V nA nA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1150 Typical Characteristics -500 -450 1000 VCE =-1V IB = -1.6mA IB = -1.4mA IB = -1.2mA IB = -1.0mA IB = -0.8mA IB = -0.6mA IB = -0.4mA IB = -0.2mA 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT -400 -350 -300 -250 -200 -150 -100 -50 0 0 -2 -4 -6 hFE, DC CURRENT GAIN -18 -20 100 -8 -10 -12 -14 -16 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE -10 -1000 IC=10IB -1 VBE(sat) IC[mA], COLLECTOR CURRENT VCE =-1V -100 -0.1 -10 VCE(sat) -0.01 -1 -10 -100 -1000 -1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE (sat)[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 f=1MHz IE=0 Cob[pF], CAPACITANCE 10 1 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1150 Package Dimensions TO-92S 4.00 ±0.20 2.31 ±0.20 0.66 MAX. (1.10) 0.49 ±0.10 1.27TYP [1.27±0.20] 3.72 ±0.20 1.27TYP [1.27±0.20] 14.47 ±0.30 3.70 ±0.20 0.35 –0.05 +0.10 2.86 ±0.20 0.77 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1