KSA1174

KSA1174 KSA1174 Audio Frequency Low Noise Amplifier • Complement to KSC2784 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -50 -10 300 150 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO ICEO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob NV Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Voltage Test Condition VCB= -120V, IE=0 VCE= -100V, IB=0 VEB= -5V, IC= 0 VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA VCE= -6V, IC= -1mA IC= -10mA, IB= -1mA VCE= -6V, IC= -1mA VCB= -30V, IE= 0, f=1MHz 50 150 200 -0.55 500 500 -0.61 -0.09 100 2 25 3 40 Min. Typ. Max. -50 -1 -50 800 -0.65 -0.3 V V MHz pF mV Units nA µA nA hFE2 Classification Classification hFE2 P 200 ~ 400 F 300 ~ 600 E 400 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1174 Typical Characteristics -1.0 IB = -1.4µ A IB = -1.2µ A IB = -1.0µ A IB = -0.8µ A -10 IB = -24µ A IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = -20µ A -8 -0.8 IB = -16µ A -6 -0.6 IB = -0.6µ A -0.4 IB = -12µ A -4 I B = -8 µ A IB = -0.4µ A -0.2 I B = -4 µ A -2 IB = -0.2µ A IB = 0 IB = 0 0 -80 -100 0 -1 -2 -3 -4 -5 0.0 0 -20 -40 -60 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic 1000 VCE(sat), VBE(sat)[V], SATURATION VOLTAGE -10 VCE= -6V 800 IC = 10IB hFE, DC CURRENT GAIN -1 V BE(sat) 600 400 -0.1 V CE(sat) 200 0 -0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10 1000 IE=0 f = 1MHz VCE = -6V Cob [pF], CAPACITANCE 100 1 10 0.1 -1 -10 -100 -1000 1 0.1 1 10 100 V CB [V], COLLECTOR-BASE VOLTAGE IE[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1174 Typical Characteristics (Coninued) 800 700 PC[mW], POWER DISSIPATION 600 500 400 300 200 100 0 0 25 50 o 75 100 125 150 175 200 Ta[ C], AMBIENT TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1174 Package Dimensions TO-92S 4.00 ±0.20 2.31 ±0.20 0.66 MAX. (1.10) 0.49 ±0.10 1.27TYP [1.27±0.20] 3.72 ±0.20 1.27TYP [1.27±0.20] 14.47 ±0.30 3.70 ±0.20 0.35 –0.05 +0.10 2.86 ±0.20 0.77 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1