KSA1203

KSA1203 PNP Epitaxial Silicon Transistor July 2005 KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 12 PY 1 03 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC IB PC P C* TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C unless otherwise noted Parameter Ratings -30 -30 -5 -1.5 -0.3 500 1,000 150 -55 ~ 150 Units V V V A A mW mW °C °C Collector Power Dissipation Junction Temperature Storage Temperature 2 * Mounted on Ceramic Board (250mm × 0.8mm) Electrical Characteristics T Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob a= 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = -10mA, IB = 0 IE = -1mA, IC = 0 VCB = -30V, IE = 0 VBE = -5V, IC = 0 VCE = -2V, IC = -500mA IC = -1.5A, IB = -30mA VCE = -2V, IC = -500mA VCE = -2V, IC = -500mA VCB = -10V, IE = 0, f = 1MHz Min. -30 -5 Typ. Max. Units V V -100 -100 100 320 -2.0 -1.0 120 50 nA nA V V MHz pF ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSA1203 Rev. B3 KSA1203 PNP Epitaxial Silicon Transistor hFE Classification Classification hFE O 100 ~ 200 Y 160 ~ 320 Package Marking and Ordering Information Device Marking 1203 Device KSA1203 Package SOT-89 Reel Size 13” Tape Width -- Quantity 4,000 KSA1203 Rev. B3 2 www.fairchildsemi.com KSA1203 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic -1.6 -1.4 Figure 2. DC Current Gain 1000 IB =-10mA IB =-8mA IB =-6mA IB =-4mA IB =-3mA IB =-2mA VCE = -2V IC[A], COLLECTOR CURRENT -1.0 -0.8 -0.6 -0.4 -0.2 hFE, DC CURRENT GAIN -1.2 100 IB =-1mA IB =0mA -0 -2 -4 -6 -8 -10 -12 -14 -16 10 -1 -10 -100 -1000 -10000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage -10 Figure 4. Base-Emitter On Voltage -1.6 VCE(sat)[V], SATURATION VOLTAGE IC = 50IB VCE = -2V -1.4 IC[A], COLLECTOR CURRENT -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 -1 -0.1 -0.01 -1 -10 -100 -1000 -10000 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Safe Operating Area -10 Figure 6. Power Derating Ta=25 C Single Pulse PC[W], POWER DISSIPATION s 1m o 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ICMAX(Pulse) IC[A], COLLECTOR CURRENT ICMAX(DC) -1 s m 10 10 0m s 1s M ou n te d on Ce ra m ic -0.1 Bo ar d (2 50 VCEOMAX m m X0 . 2 8m m ) 150 175 200 -0.01 -0.1 -1 -10 -100 0 25 50 o 75 100 125 VCE[V], COLLECTOR-EMITTER VOLTAGE Ta[ C], AMBIENT TEMPERATURE KSA1203 Rev. B3 3 www.fairchildsemi.com KSA1203 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters KSA1203 Rev. B3 4 www.fairchildsemi.com KSA1203 PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 KSA1203 Rev. B3 www.fairchildsemi.com