KSA3010

KSA3010 PNP Epitaxial Silicon Transistor January 2007 KSA3010 PNP Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC = - 6A High Power Dissipation Wide S.O.A Complement to KSC4010 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value -120 -120 -5 -6 -12 60 150 - 50 ~ 150 Units V V V A A W °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T =25°C unless otherwise noted a Symbol RθJC * Device mounted on the minimum pad size. Parameter Thermal Resistance, Junction to Case Value 2.0 Units °C/W Electrical Characteristics* Symbol BVCEO ICBO IEBO hFE VCE(sat) VBE(on) fT Cob Ta = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Conditions IC= -5A, IB= 0 VCB= -120V, IE= 0 VEB= -5V, IC= 0 VCE= -5V, IC= -1A, IC= -5A, IB= -0.5A VCE= -5V, IC= -5A VCE= -5V, IC= -1A VCB=-10V, IE=0, f=1MHz Min. -120 55 - Typ. 30 180 Max. -10 -10 160 -2.5 -1.5 - Units V µA µA V V MHz pF * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% hFE Classification Classification hFE R 55 ~ 110 O 80 ~ 160 ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSA3010 Rev. C KSA3010 PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Device Item (note) KSA3010RTU KSA3010OTU Device Marking A3010R A3010O Package TO-3P TO-3P Packing Method TUBE TUBE Qty(pcs) 450 450 Note : The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging 2 KSA3010 Rev. C www.fairchildsemi.com KSA3010 PNP Epitaxial Silicon Transistor Typical Characteristics 10 9 A 00m IB=-2 80mA IB=-1 -160mA IB= A IB=-140m I =-120mA B 10 3 VCE=5V IC(A), COLLECTOR CRRENT 8 7 6 IB=-100mA hFE, DC CURRENT GAIN IB=-80mA IB=-60mA 5 IB=-40mA 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 IB=-20mA TC=100℃ TC=25℃ 10 2 10 1 0.1 1 10 VCE(V), COLLECTOR EMITTER VOLTAGE IC(A), COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC=10IB VCE(sat), SATURATION VOLTAGE 9 IC(A), COLLECTOR CURRENT VCE=-5V 8 7 6 5 TC=100℃ 4 3 2 1 TC=25℃ 1 0.1 TC=100℃ TC=25℃ 0.01 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IC(A), COLLECTOR CURRENT VBE(V), BASE EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -100 100 90 IC[A], COLLECTOR CURRENT PC(W), POWER DISSIPATION IC MAX. (Pulse) -10 10 0m s 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 IC MAX. (DC) -1 DC ms 10 -0.1 *SINGLE NONREPETITIVE PULSE TC=25[ C] -0.01 0.1 1 10 100 o VCEO MAX VCE[V], COLLECTOR-EMITTER VOLTAGE TC(℃), CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating 3 KSA3010 Rev. C www.fairchildsemi.com KSA3010 PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters 4 KSA3010 Rev. C www.fairchildsemi.com KSA3010 PNP Epitaxial Silicon Transistor KSA3010 PNP Epitaxial Silicon Transistor FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 5 KSA3010 Rev. C www.fairchildsemi.com