KSA733CY

KSA733 KSA733 Low Frequency Amplifier • Collector-Base Voltage : VCBO= -60V • Complement to KSC945 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -5 -150 250 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -100µA, IE=0 IC= -10mA. IB=0 IE = -10µA. IC=0 VCB= --60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE = 0, f=1MHz VCE= -6V, IC= -0.3mA f=1MHz, Rs=10kΩ -0.50 50 40 -0.18 -0.62 180 2.8 6.0 20 Min. -60 -50 -5 -100 -100 700 -0.3 -0.80 V V MHz pF dB Typ. Max. Units V V V nA nA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 L 350 ~ 700 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA733 Typical Characteristics -50 -45 1000 VCE = -6V IB = -400µ A IB = -350µ A IB = -300µ A IB = -250µ A IB = -200µ A IB = -150µ A IB = -100µ A IB = -50µ A 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 1 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT -40 -35 -30 -25 -20 -15 -10 -5 0 hFE, DC CURRENT GAIN 100 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -100 IC = 10 IB VCE = -6V IC[mA], COLLECTOR CURRENT -1 V BE(sat) -10 -0.1 -1 V CE(sat) -0.01 -1 -10 -100 -1000 -0.1 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz 10 VCE = -6V Cob [pF], CAPACITANCE 100 1 -1 -10 -100 10 -1 -10 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA733 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1