KSA992
KSA992
Audio Frequency Low Noise Amplifier
• Complement to KSC1845
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -50 -10 500 150 -55 ~ 150 Units V V V mA mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO ICEO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob NV Parameter Collector Cut-off Current Collector Cur-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Voltage Test Condition VCB= -120V, IE=0 VCE= -100V, IB=0 VEB= -5mA, IC=0 VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA VCE= -6V, IC= -1mA IC= -10mA, IB= -1mA VCE= -6V, IC= -1mA VCB= -30V, IE=0, f=1MHz VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 50 150 200 -0.55 500 500 -0.61 -0.09 100 2 25 3 40 Min. Typ. Max. -50 -1 -50 800 -0.65 -0.3 V V MHz pF mV Units nA µA nA
hFE2 Classification
Classification hFE2 P 200 ~ 400 F 300 ~ 600 E 400 ~ 800
©2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
KSA992
Typical Characteristics
-1.0
IB = -1.2µA
-10
IB = -1.2µA IB = -1.0µA IB = -0.8µA
IB = -24µA
IC[mA], COLLECTOR CURRENT
-0.8
IC[mA], COLLECTOR CURRENT
IB = -20µA IB = -16µA
-8
-0.6
-6
IB = -0.6µA
-0.4
IB = -12µA IB = -8µA
-4
IB = -0.4µA
-0.2
IB = -0.2µA IB = 0
0 -20 -40 -60 -80 -100
-2
IB = -4µA
0.0
0 0 -1 -2
IB = 0
-3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
VCE(sat), VBE(sat)[V], SATURATION VOLTAGE
-10
VCE= -6V
800
IC = 1 0 - IB
hFE, DC CURRENT GAIN
-1
VBE(sat)
600
400
-0.1
VCE(sat)
200
0 -0.01
-0.1
-1
-10
-100
-0.01 -0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
10
1000
IE=0 f = 1MHz
VCE = -6V
Cob [pF], CAPACITANCE
100
1
10
0.1 -1
-10
-100
-1000
1 0.1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IE[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
KSA992
Typical Characteristics (Continued)
800 700
PC[mW], POWER DISSIPATION
600 500 400 300 200 100 0 0 25 50
o
75
100
125
150
175
Ta[ C], AMBIENT TEMPERATURE
Figure 7. Power Derating
©2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
KSA992
Package Dimensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™
ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™
Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™
SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2004 Fairchild Semiconductor Corporation
Rev. I11
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