KSB1097

KSB1097 KSB1097 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1588 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 80 - 60 -7 -7 - 15 - 3.5 2 30 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 3A VCE = - 1V, IC = - 5A IC = - 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A 40 20 Min. Max. - 10 - 10 200 - 0.5 - 1.5 V V Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1097 Typical Characteristics -1.0 -0.9 1000 IB = -20mA IB = -18mA VCE = -1V IC [A], COLLECTOR CURRENT -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 -0 -5 -10 -15 IB = -14mA IB = -12mA IB = -10mA IB = -8mA IB = -6mA IB = -4mA IB = -2mA hFE, DC CURRENT GAIN -45 -50 IB = -16mA 100 10 -20 -25 -30 -35 -40 1 -1E-3 -0.01 -0.1 -1 -10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE(sat), VCE(sat) [V], SATURATION VOLTAGE -10 40 IC=10IB 35 PD [W], POWER DISSIPATION 30 -1 V BE(sat) 25 20 15 -0.1 VCE(sat) 10 5 -0.01 -1E-3 0 -0.01 -0.1 -1 -10 0 25 50 o 75 100 125 150 175 200 IC [A], COLLECTOR CURRENT Tc [ C], CASE TEMPERATURE Figure 3. Saturation Voltage Figure 4. Power Derating 160 -100 140 IC [A], COLLECTOR CURRENT 50uS -10 120 dT [%], Ic DERATING 100uS 300uS 100mS 1mS 10mS 100 80 -1 s/b LIMITED 60 40 -0.1 DISSIPATION LIMITED 20 0 0 25 50 O -0.01 75 100 125 150 175 200 -1 -10 -100 -1000 Tc [ C], CASE TEMPERATURE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Power Derating Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1097 Package Demensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E