KSB1149

KSB1149 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C) 1 TO-126 2.Collector 3.Base 1. Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 100 - 100 -8 -3 -5 1.3 15 150 - 55 ~ 150 Units V V V A A W W °C °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB = - 100V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 1.5A VCE = - 2V, IC = - 3A IC = - 1.5A, IB = - 1.5mA IC = - 1.5A, IB = - 1.5mA VCC = - 40V, IC = - 1.5A IB1 = - IB2 = - 1.5mA R L = 2 7Ω 2000 1000 - 0.9 - 1.5 0.5 2 1 Min. Typ. Max. - 10 -2 20000 - 1.2 -2 V V µs µs µs Units µA mA * Pulse test: PW≤350µs, duty Cycle≤2% Pulsed hFE Classification Classification hFE1 O 2000 ~ 5000 Y 4000 ~ 12000 G 6000 ~ 20000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1149 Typical Characteristics -5 IB = -1 m 100000 A IB=-500uA IB =-400uA IB =-300uA IB=-200uA Ic[A], COLLECTOR CURRENT IB=-900uA -4 VCE = -2V Pulsed IB=-800uA IB=-700uA IB =-600uA hFE, DC CURRENT GAIN -5 10000 -3 IB=-100uA -2 1000 -1 -0 -0 -1 -2 -3 -4 100 -0.01 -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 -10 Ic = 1000 IB Pulsed Ic(Pulse) Ic(DC) IC[A], COLLECTOR CURRENT Dis -1 sip 20 10 0m s s 0u 10 us 0 30 s 1m m s ati on -10 Lim ite d s/b ite Lim VBE(sat) -1 d -0.1 VCE (sat) -0.1 -0.1 -1 -10 -0.01 -1 Tc=25 C Single Pulse -10 -100 500 o IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Forward Bias Safe Operating Area 160 20 140 PC[W], POWER DISSIPATION 120 15 dT[%], Ic DERATING 100 80 s/b DI 10 LIM 60 ITE D TI O SS IP A 40 N 5 LI 20 M IT ED 0 25 50 o 0 75 100 125 150 175 200 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1149 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E