KSB564AOTA

KSB564A KSB564A Audio Frequency Power Amplifier • • • • Complement to KSD471A Collector Current : IC = -1A Collector Power Dissipation : PC = 800mW Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 -1.0 800 150 -55 ~ 150 Units V V V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -30V, IE=0 VCE= -1V, IC= -100mA IC= -1A, IB= -0.1A IC= -1A, IB= -0.1A VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz 110 18 70 Min. -30 -25 -5 -0.1 400 -0.5 -1.2 V V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB564A Typical Characteristics -1.0 -0.9 1000 VCE=-1.0V IC[A], COLLECTOR CURRENT -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 1 -10 IB = -8mA IB = -7mA IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = -1mA hFE, DC CURRENT GAIN 100 10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 100 IC = 10 IB f = 1MHz IE=0 -1 VBE(sat) Cob[pF], CAPACITANCE 10 -0.1 VCE(sat) -0.01 -1 -10 -100 -1000 1 -1 -10 -100 IC[mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT -10 VCE = -6V 1.TC=25 C 2.Single pulse o 100 IC[A], COLLECTOR CURRENT -1 0m 20 s DC -0.1 10 -0.01 1 10 100 -1 -10 -100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB564A Package Demensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3