KSB596

KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 80 - 80 -5 -4 - 0.4 30 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE (on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = - 50mA, IB = 0 IE = - 10mA, IC = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz 3 130 40 15 -1 -1 Min. - 80 -5 - 70 - 100 240 - 1.7 - 1.5 V V MHz pF Typ. Max. Units V V µA µA hFE Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB596 Typical Characteristics -4.0 IB = -140mA IB = -160mA -1 IB = 20m A 1000 0m I B = -1 0 A VCE = -5V Ic[A], COLLECTOR CURRENT -3.2 IB = -180mA IB = -80mA hFE, DC CURRENT GAIN IB = -60mA -2.4 100 IB = -40mA -1.6 IB = -20mA 10 -0.8 IB = 0mA 0 -1 -2 -3 -4 -5 1 -0.001 -0.01 -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -4 -10 -3 VCE(sat)[V], SATURATION VOLTAGE VCE = -5V IC = 10 IB IC[A], COLLECTOR CURRENT -1 -2 -0.1 -1 0 -0.4 -0.8 -1.2 -1.6 -0.01 -0.001 -0.01 -0.1 -1 -10 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage -200 -10 VCE = -5V Ic Max(Pulse) 10 IC[mA], COLLECTOR CURRENT 0m 10 1m ms s s -160 IC[A], COLLECTOR CURRENT Ic Max(Continuous) DC (T c= 1s 25 -120 C) o -1 -80 -40 0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB596 Typical Characteristics (Continued) 40 35 PC[W], POWER DISSIPATION 30 25 20 15 10 5 0 25 50 o 75 100 125 150 175 200 TC[ C], CASE TEMPERATURE Figure 1. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB596 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E