KSB707/708
KSB707/708
Low Frequency Power Amplifier
• Low Speed Switching • Industrial Use • Complement to KSD568/569
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature : B707 : B708 Value - 80 - 60 - 80 - 7.0 - 7.0 - 15 - 3.5 40 1.5 150 - 55 ~ 150 Units V V V V A A A W W °C °C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 3A VCE = - 1V, IC = - 5A IC = - 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A 40 20 Typ. Max. - 10 - 10 200 - 0.5 - 1.5 V V Units µA µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
hFE Cassification
Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB707/708
Typical Characteristics
-1.0
1000
IB = -20mA
VCE = -1V
IC[A], COLLECTOR CURRENT
-0.8
IB = -18mA IB = -16mA IB = -14mA
hFE, DC CURRENT GAIN
-50
100
-0.6
IB = -12mA
IB = -10mA
-0.4
IB = -8mA IB = -6mA
10
-0.2
IB = -4mA IB = -2mA
0
-10
-20
-30
-40
1 -0.001
-0.01
-0.1
-1
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE(sat)[V],VBE(sat)[V] SATURATION VOLTAGE
-10
IC = 10·I B
50
-10
IC[A], COLLECTOR CURRENT
10
10 Dis 0ms s Lim ipatio n ite d
ms
10 30 0us 0u s
us
-1
1m
VBE(sat)
s
-1
s/ b m Li d it e
-0.1
-0.1
VCE(sat)
-0.01 -0.001
-0.01 -0.01 -0.1 -1 -10 -1 -10 -100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
160
50
140
120
100
PC[W], POWER DISSIPATION
125 150 175 200
40
dT[%], Ic DERATING
30
80
s/b
Di ss ip a
Lim
60
ite d
20
40
tio n
Li m ite
d
10
20
0 25 50
o
0 75 100 25 50
o
75
100
125
150
175
200
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB707/708
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 –0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™
DISCLAIMER
HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6
SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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