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KSB810

KSB810

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    KSB810 - Audio Frequency Amplifier - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
KSB810 数据手册
KSB810 KSB810 Audio Frequency Amplifier • Complement to KSD1020 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5.0 -700 -1.0 350 150 -55 ~ 150 Units V V V mA A mW °C °C * PW≤10ms, Duty cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) VBE (sat) Cob fT Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Base-Emitter on Voltage * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -700mA VCE= -6V, IC= -10mA IC= -700mA, IB= -70mA IC= -700mA, IB= -70mA VCB= -6V, IE=0, f=1MHz VCE= -6V, IC=-10mA 50 70 35 -600 200 100 -640 -0.25 -0.95 17 160 Min. Typ. Max. -100 -100 400 -700 -0.4 -1.2 40 mV V V pF MHz Units nA nA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB810 Typical Characteristics -50 1000 IB = -250µ A VCE= -1V IC[mA], COLLECTOR CURRENT -40 -30 IB = -150µ A hFE, DC CURRENT GAIN IB = -200µ A 100 -20 IB = -100µ A -10 IB = -50µ A 0 0 -10 -20 -30 -40 -50 10 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1000 1000 VCE = -6V V BE(sat) 100 -100 V CE(sat) IC=10IB 10 -10 -10 -100 -1000 1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB810 Package Demensions TO-92S 4.00 ±0.20 2.31 ±0.20 0.66 MAX. (1.10) 0.49 ±0.10 1.27TYP [1.27±0.20] 3.72 ±0.20 1.27TYP [1.27±0.20] 14.47 ±0.30 3.70 ±0.20 0.35 –0.05 +0.10 2.86 ±0.20 0.77 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3
KSB810
1. 物料型号: - KSB810

2. 器件简介: - KSB810是一款音频频率放大器,与KSD1020互补,是一个PNP外延硅晶体管。

3. 引脚分配: - 1. 发射极(Emitter) - 2. 集电极(Collector) - 3. 基极(Base)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):-30V - VCEO(集电极-发射极电压):-25V - VEBO(发射极-基极电压):-5.0V - IC(集电极电流(DC)):-700mA - ICP(集电极电流(脉冲)):-1.0A - PC(集电极功率耗散):350mW - TJ(结温):150°C - TSTG(存储温度):-55 ~ 150°C

5. 功能详解: - 电气特性(Ta = 25°C除非另有说明): - ICBO(集电极截止电流):VCB=-30V, IE=0时,-100nA - IEBO(发射极截止电流):VEB=-5V, IC=0时,-100nA - hFE(直流电流增益):VCE=-1V, IC=-100mA时,70~400 - VCE(sat)(集电极-发射极饱和电压):IC=-700mA, IB=-70mA时,-0.25~-0.4V - Cob(输出电容):VCB=-6V, IE=0, f=1MHz时,17~40pF - fT(电流增益带宽积):VCE=-6V, IC=-10mA时,50~160MHz

6. 应用信息: - KSB810适用于音频频率放大,与KSD1020配合使用。

7. 封装信息: - TO-92S封装,具体尺寸为: - 3.72 ±0.20 mm - 2.86 ±0.20 mm - 0.77 ±0.10 mm
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