KSC1008CYBU

KSC1008 NPN Epitacial Silicon Transistor September 2006 KSC1008 NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW • Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base) • Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector) • Complement to KSA708 KSC1008 1 23 tm TO-92 : 1. Emitter 2. Base 3. Collector KSC1008C : 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * T Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature a = 25°C unless otherwise noted Parameter Value 80 60 8 700 800 +150 -55 ~ +150 Units V V V mA mW °C °C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics * T Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob a = 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz Min. 80 60 8 Typ. Max. Units V V V 0.1 0.1 40 0.2 0.86 30 50 8 400 0.4 1.1 µA µA V V MHz pF * DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2% hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSC1008 Rev. B KSC1008 NPN Epitacial Silicon Transistor Package Marking and Ordering Information Device(note) KSC1008COBU KSC1008COTA KSC1008CYBU KSC1008CYTA KSC1008GBU KSC1008GTA KSC1008OBU KSC1008OTA KSC1008RBU KSC1008RTA KSC1008YBU KSC1008YTA KSC1008YTF Device Marking C1008OC C1008OC C1008YC C1008YC C1008G C1008G C1008O C1008O C1008R C1008R C1008Y C1008Y C1008Y Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Packing Method BULK TAPE & AMMO BULK TAPE & AMMO BULK TAPE & AMMO BULK TAPE & AMMO BULK TAPE & AMMO BULK TAPE & AMMO TAPE & REEL Qty(pcs) -2,000 -2,000 -2,000 -2,000 -2,000 -2,000 2,000 Pin Definitions 1.Emitter 2.Collector 3.Base 1.Emitter 2.Collector 3.Base 1.Emitter 2.Collector 3.Base 1.Emitter 2.Collector 3.Base 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector Note : Affix “-C-” - center collector pin. Affix “-R-, -O-, -Y-, -G-” - hHE classification Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions) Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions) SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions) 2 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor Typical Characteristics 200 240 IB = 1.8mA 180 IB = 1.6mA IB = 1.4mA 220 200 VCE = 2V IC[mA], COLLECTOR CURRENT 160 140 hFE, DC CURRENT GAIN 180 160 140 120 100 80 60 40 IB = 1.2mA 120 IB = 1.0mA 100 IB = 0.8mA 80 60 40 20 0 0 5 10 15 20 25 30 35 40 45 50 IB = 0.6mA IB = 0.4mA IB = 0.2mA 20 0 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC=10IB VCE=2V 1 IC[mA], COLLECTOR CURRENT 100 1000 100 VBE(sat) 0.1 10 VCE(sat) 0.01 1 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 f=1MHz IE=0 Cob[pF],CAPACTIANCE 10 1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance 3 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor Package Dimensions TO-92 Straight Lead Form 4.58 –0.15 +0.25 14.47 ±0.40 0.46 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 3.86MAX 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters Dimensions in Millime TO-92 0.200 In-Line Spacing Lead Form Dimensions in Inches[Millimeters] 4 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor KSC1008 NPN Epitacial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 KSC1008 Rev. B www.fairchildsemi.com