KSC1393

KSC1393 KSC1393 TV VHF Tuner RF Amplifier (Forward AGC) • High Current Gain Bandwidth Product : fT=700MHz (TYP.) • Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz • Low Reverse Transfer Capacitance : CRE=0.5pF (MAX.) 1 TO-92 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 30 4 20 250 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE fT CRE GPE IAGC NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Current Gain Bandwidth Product Reverse Transfer Capacitance Power Gain AGC Current Noise Figure Test Condition IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=10V, IC=2mA VCE=10V, IC=3mA VCB=10V, IE=0, f=1MHz VCE=10V, IC=3mA f=200MHz IE at GR= -30dB, f=200MHz VCE=10V, IC= 3mA f=200MHz 20 40 400 700 0.35 24 -10 2.0 -12 3.0 0.5 Min. 30 30 4 0.1 180 MHz pF dB mA dB Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 80 O 60 ~ 140 Y 90 ~ 180 ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC1393 Typical Characteristics 10 9 IB = 200µA = 180µA IB IB = 160µA IB = 140µA IB = 120µA IB = 100µA IB = 80µA IB = 60µA IB = 40µA VCE = 2V 100 IC[mA], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 IB = 20µA 6 7 8 9 10 10 0.1 1 10 hFE, DC CURRENT GAIN VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC=10IB f=1MHz IE=0 1 VBE(sat) Cre[pF], CAPACITANCE 10 1 VCE(sat) 0.1 0.01 0.1 1 0.1 1 100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Reverse Capacitance 10000 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VCE = 10V 1000 100 10 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC1393 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1