KSC2223

KSC2223 KSC2223 High Frequency Amplifier • • • • Very small size to assure good space factor in Hybrid IC applications fT=600MHz (TYP) at IC=1mA Cob=1pF (TYP) at VCB=6V NF=3dB (TYP) at f=100MHz 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 20 4 20 150 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO hFE VCE (sat) Cob fT Cc·rbb NF Parameter Collector Cut-off Current DC Current Gain Collector Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Time Constant Noise Figure Test Condition VCB=30V, IE=0 VCE=6V, IC=1mA IC=10mA, IB=1mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=1mA VCB=6V, IC=1mA f=31.9MHz VCE=6V, IC=1mA f=100MHz, RS=50Ω 400 Min. 40 Typ. 90 0.1 1 600 12 3 Max. 0.1 180 0.3 V pF MHz ps dB Units µA hFE Classification Classification hFE R 40 ~ 80 Marking O 60 ~ 120 Y 90 ~ 180 H5 O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSC2223 Typical Characteristics 10 1000 VCE = 6V IC[mA], COLLECTOR CURRENT IB = 80µA 8 6 IB = 60µA IB = 50µA hFE, DC CURRENT GAIN IB = 70µA 100 4 IB = 40µA IB = 30µA 2 IB = 20µA IB = 10µA 0 0 4 8 12 16 20 10 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 1 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 IC = 1mA IC = 10 IB hFE, DC CURRENT GAIN 1 VBE(sat) 100 0.1 VCE(sat) 10 1 10 100 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain 2 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VCE = 6V Cc.rbb[ps], COLLECTOR-BASE TIME CONSTANT 1000 100 IC[mA], COLLECTOR CURRENT VCB = 6V f = 31.9MHz 100 10 10 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 1 10 100 VBE[V], BASE-EMITTER VOLTAGE IE[mA], EMITTER CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Collector-Base Time Constant ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSC2223 Typical Characteristics (Continued) fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10000 24 VCE = 6V f = 100MHz 20 VCE = 6V NF[dB], NOISE FIGURE 16 1000 12 8 4 0 0.1 1 10 100 0.1 1 10 100 IE[mA], EMITTER CURRENT IE[mA], EMITTER CURRENT Figure 7. Noise Figure Figure 8. Current Gain Bandwidth Product 10 200 f = 1MHz 180 Cie[pF], INPUT CAPACITANCE Cob[pF], OUTPUT CAPACITANCE PC[mW], POWER DISSIPATION 100 160 140 120 100 80 60 40 20 Cie (IC=0) Cob (IE=0) 1 0.1 0.1 1 10 0 0 25 50 o 75 100 125 150 175 VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE Ta[ C], AMIBIENT TEMPERATURE Figure 9. Input and Output Capacitance Figure 10. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSC2223 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1