KSC2316

KSC2316 KSC2316 Audio Power Amplifier Applications • Driver Stage Amplifier • Complement to KSA916 1 TO-92L 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 120 120 5 800 900 150 -55 ~ +150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance Test Condition IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=100mA VCB=10V,IE=0, f=1MHz 120 30 60 80 Min. 120 120 5 0.1 240 1 V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE2 O 80-160 Y 120-240 ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC2316 Typical Characteristics 1000 1000 VCE = 5V IC[mA], COLLECTOR CURRENT 800 IB = 15mA IB = 10mA IB = 7mA 600 IB = 5mA IB = 4mA hFE, DC CURRENT GAIN 100 400 IB = 3mA IB = 2mA 200 IB = 1mA 0 0 2 4 6 8 IB = 0 10 12 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10000 VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB VCE = 5V IC[mA], COLLECTOR CURRENT 1000 1 100 0.1 10 0.01 0.1 1 10 100 1000 1 0.0 0.2 0.4 0.6 0.8 1.0 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10000 *Single Pulse IC[mA], COLLECTOR CURRENT s* 1m s* 0m 10 * s m 10 1000 DC TC =2 OP o 5C ER AT IN G 100 10 1 10 100 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC2316 Package Dimensions TO-92L 4.90 ±0.20 8.00 ±0.20 1.70 ±0.20 1.00 ±0.10 0.70MAX. 0.80 ±0.10 1.00MAX. 13.50 ±0.40 0.50 ±0.10 1.27TYP [1.27 ±0.20] 2.54 TYP 0.45 ±0.10 1.45 ±0.20 3.90 ±0.20 3.90 ±0.20 0.45 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1