KSC2335
KSC2335
High Speed, High Voltage Switching
• Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
1
TO-220 2.Collector 3.Emitter
1.Base
Value 500 400 7 7 15 3.5 1.5 40 150 - 55 ~ 150
Units V V V A A A W W °C °C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 3A, IB1 = 0.6A, L = 1mH IC = 3A, IB1 = -IB2 = 0.6A VBE(off) = -5V, L = 180µH, Clamped IC = 6A,IB1= 2A, IB2 = -0.6A VBE(off) = -5V, L = 180µH, Clamped VCB = 400V, IE = 0 VCE = 400V, RBE= 51Ω @ TC=125°C VCE = 400V, VBE(off)= -1.5V VCE = 400V, VBE(off)= -1.5V @ TC=125°C VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCC =150V, IC= 3A IB1 = -IB2 = 0.6A RL= 50Ω 20 20 10 Min. 400 450 400 10 1 10 1 10 80 80 1 1.2 1 2.5 1 V V µs µs µs Max. Units V V V µA mA µA mA µA
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classification
Classification hFE2
©2001 Fairchild Semiconductor Corporation
R 20 ~ 40
O 30 ~ 60
Y 40 ~ 80
Rev. A1, June 2001
KSC2335
Typical Characteristics
IB=0.45A
5
IB=0.50A
IB=0.40A IB=0.35A IB=0.30A IB=0.25A IB=0.20A
1000
VCE = 5 V Pulsed
IC[A], COLLECTOR CURRENT
4
hFE, DC CURRENT GAIN
100
3
IB=0.15A IB=0.10A
2
10
IB=0.05A
1
0 0 1 2 3 4 5
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE(SAT) [V], VBE(SAT) [V], SATURATION VOLTAGE
10
160
IC = 5 IB Pulsed
140
120 1
VBE(SAT)
dT [%], IC DERATING
100
80
S/b Limited
60
0.1
40
VCE(SAT)
20
Dissipation Limited
0.01 0.01
0 0.1 1 10 0 50
o
100
150
200
VCB[V], COLLECTOR-BASE VOLTAGE
TC [ C], CASE TEMPERATURE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Derating Curve of Safe Operating Areas
10
100
Single Pulse
PW = 10 us
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
8
10
50 us
1
6
Dissipation Limoted
0.1 ms 0.3 ms
4
0.1
S/b Limited 1 ms 100 ms
VCEO(SUS)
2
VCEX(SUS)
0.01
10 ms
0 0 100 200 300 400 500
1E-3 1 10 100 1000 10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Forward Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC2335
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 –0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™
FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™
PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™
Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
