KSC2500

KSC2500 KSC2500 Medium Power Amplifier & Low Saturation 1 TO-92L 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 30 10 6 2 5 0.5 900 150 -55 ~ 150 Units V V V V A A A mW °C °C * PW≤10ms, Duty Cycle≤30% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO BVCBO BVEBO hFE 1 hFE 2 VCE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=30V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=0.5A VCB=10V, IE=0, f=1MHz 10 6 140 70 600 200 0.2 0.86 150 27 0.5 1.5 V V MHz pF Min. Typ. Max. 100 100 Units nA nA V V hFE1 Classification Classification hFE1 A 140 ~ 240 B 200 ~ 330 C 300 ~ 450 D 420 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2500 Typical Characteristics 5 IB = 50mA IB = 40mA 10000 EMITTER COMMON Ta=25 C hFE, DC CURRENT GAIN o EMITTER COMMON VCE=1V IC[A], COLLECTOR CURRENT 4 IB = 30mA IB = 20mA 1000 3 2 IB = 10mA IB = 5mA 100 1 IB = 0mA 0 0 1 2 3 4 5 10 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 1 5 VCE(sat)[V], SATURATION VOLTAGE EMITTER COMMON IC/I B=40 EMITTER COMMON VCE=1V IC[A], COLLECTOR CURRENT 4 3 0.1 2 1 0.01 0.1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 IC M AX. (Pulse) 10 s m 0m s IC[A], COLLECTOR CURRENT IC M AX. (Continuous) 10 1 DC (T a =2 5 C) o 0.1 0.01 0.1 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2500 Package Dimensions TO-92L 4.90 ±0.20 8.00 ±0.20 1.70 ±0.20 1.00 ±0.10 0.70MAX. 0.80 ±0.10 1.00MAX. 13.50 ±0.40 0.50 ±0.10 1.27TYP [1.27 ±0.20] 2.54 TYP 0.45 ±0.10 1.45 ±0.20 3.90 ±0.20 3.90 ±0.20 0.45 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1