KSC2669

KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz (TYP.) 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 30 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VBE (on) VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz 100 40 0.65 0.70 0.1 250 2.0 3.2 Min. 35 30 4 0.1 0.1 240 0.75 0.4 V V MHz pF Typ. Max. Units V V V µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2669 Typical Characteristics 10 IB = 90µA IB = 80µA 1000 VCE=12V IC[mA], COLLECTOR CURRENT 8 6 IB = 60µA IB = 50µA hFE, DC CURRENT GAIN IB = 70µA 100 4 IB = 40µA IB = 30µA 2 IB = 20µA IB = 10µA 0 0 2 4 6 8 10 10 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 32 IC =10IB 28 VCE=12V IC[mA], COLLECTOR CURRENT 10 24 1 V BE(sat) 20 16 0.1 V CE(sat) 12 8 4 0.01 0.1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10 1000 f = 1MHz IE=0 VCE = 10V Cob[pF], CAPACITANCE 1 100 0.1 1 10 100 10 1 10 VCB[V], COLLECTOR BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2669 Package Dimensions TO-92S 4.00 ±0.20 2.31 ±0.20 0.66 MAX. (1.10) 0.49 ±0.10 1.27TYP [1.27±0.20] 3.72 ±0.20 1.27TYP [1.27±0.20] 14.47 ±0.30 3.70 ±0.20 0.35 –0.05 +0.10 2.86 ±0.20 0.77 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1