KSC2690

KSC2690/2690A KSC2690/2690A Audio Frequency High Frequency Power Amplifier • Complement to KSA1220/KSA1220A 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSC2690 : KSC2690A VCEO Collector- Emitter Voltage : KSC2690 : KSC2690A Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current(DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 120 160 120 160 5 1.2 2.5 0.3 1.2 20 150 - 55 ~ 150 V V V V V A A A W W °C °C Value Units VEBO IC ICP IB PC PC TJ TSTG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = 120V, IE = 0 VEB = 3V, IC= 0 VCE = 5V, IC = 5mA VCE = 5V, IC = 0.3A IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A VCE = 5V, IC = 0.2A VCB =10V, IE =0, f = 1MHz 35 60 105 140 0.4 1 155 19 Min. Typ. Max. 1 1 320 0.7 1.3 V V MHz pF Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classificntion Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2690/2690A Typical Characteristics 1.6 1000 Pulse Test 1.4 VCE = 5V Pulse Test IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 70 80 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 IB=10mA IB=9mA IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA IB=0mA 10 20 30 40 50 60 100 10 1 1E-3 0.001 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 5 I B Pulse Test VBE (sat) f = 1MHz IE = 0 1 Cob[pF], CAPACITANCE 100 0.1 10 VCE (sat) 0.01 1E-3 1 0.01 0.1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 10 IC[A], COLLECTOR CURRENT VCE = 5V Pulse Test IC(max) Pulse PW m 10 s 1m IC(max) DC 1 = 10 100 Dis sip Lim ation ited s 0u s s) m 50 = t ed i W (P Lim DC S/b 10 0.1 KSC2690 VCEO M AX 0.01 KSC2690A VCEO M AX 1000 1 0.01 0.1 1 1 10 100 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2690/2690A Typical Characteristics (Continued) 160 32 140 28 120 PC[W], POWER DISSIPATION 150 175 24 dT[%], IC DERATING 100 20 80 S/b Di ss Lim ited tio n 16 60 ipa 12 40 Lim ite 8 d 20 4 0 0 25 50 o 0 75 100 125 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2690/2690A Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E