KSC2751
KSC2751
High Speed High Current Switching Industrial Use
TO-3P
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
1
1.Base 2.Collector 3.Emitter
Value 500 400 7 15 30 7.5 120 150 - 55 ~ 150
Units V V V A A A W °C °C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO (sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Curren Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 10A, IB1= 2A, L = 50µH IC = 10A, IB1= -IB2 = 2A TC =125°C, l = 180µH, Clamped IC = 20A, IB1 = 4A, -IB2 = 2A TC= 125°C, L = 180µH,Clamped VCB = 400V, IE = 0 VCE = 400V, RBE = 50Ω @ TC = 125°C VCE = 400V, VBE(off) = -1.5V VCE = 400V, VBE(off) = -1.5V @ TC = 125Ω VEB = 5V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE = 5V, IC = 10A IC = 10A, IB = 2A IC = 10A, IB = 2A VCC = 150V, IC = 10A IB1 = -IB2 = 2A RL = 15Ω 15 10 7 35 Min 400 450 400 100 2 100 1 10 80 Typ Max Units V V V µA mA µA mA µA
* Collector-Emitter Saturation Voltage * Base Emitter ON Voltage Turn ON Time Storage Time Fall Time
0.3 1
1 1.5 1 2.5 0.7
V V µs µs µs
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classificntion
Classification hFE1
©2000 Fairchild Semiconductor International
N 15 ~ 30
R 20 ~ 40
O 30 ~ 60
Y 40 ~ 80
Rev. A, February 2000
KSC2751
Typical Characteristics
20 18
1000
IC[A], COLLECTOR CURRENT
16 14 12 10 8 6
hFE, DC CURRENT GAIN
IB = 2.0A IB = 1.8A IB = 1.6A IB = 1.4A IB = 1.2A IB = 1.0A IB = 0.8A IB = 0.6A IB = 0.4A IB = 0.2A
VCE = 5V Pulsed
100
10
4 2 0 0 1 2 3 4 5
1 0.01
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100
IC = 5 IB
IC = 5 IB1 = -5 IB2 Pulsed, VCC = 150V
1
tON, tSTG, tF [µs], TIME
V BE(sat)
10
tSTG
0.1
1
VCE (sat) tF tON
0.01 0.01 0.1 1 10 100 0.1 0.1 1 10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Switching Time
100
20
IC(Pulse) MAX.
PW
IC[A], COLLECTOR CURRENT
10
Dis sip Lim ation ited
1
IC[A], COLLECTOR CURRENT
10 0
=1
us
0u s
1m
VCEO(sus) MAX.
VCEO(sus)
0 0 100 200 300 400
0.1
0.01 1 10 100 1000
VCEX(sus)
500
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
s m d 10 ite Lim DC S/b
s
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Reverse Bias Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2751
Typical Characteristics (Continued)
160
160
140
140
120
PC[W], POWER DISSIPATION
125 150 175
120
dT[%], IC DERATING
100
100
80
80
S/b
60
Di ss
Lim ited
ipa
60
tio n
40
Lim ite
40
d
20
20
0 0 25 50
o
0 75 100 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Area
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2751
Package Demensions
TO-3P
15.60 ±0.20
3.80 ±0.20
13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20
4.80 ±0.20 1.50 –0.05
+0.15
12.76 ±0.20
19.90 ±0.20
16.50 ±0.30
3.00 ±0.20 1.00 ±0.20
3.50 ±0.20
2.00 ±0.20
13.90 ±0.20
23.40 ±0.20
18.70 ±0.20
1.40 ±0.20
5.45TYP [5.45 ±0.30]
5.45TYP [5.45 ±0.30]
0.60 –0.05
+0.15
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™
DISCLAIMER
HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6
SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
