KSC2881

KSC2881 NPN Epitaxial Silicon Transistor July 2005 KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 28 PY 1 81 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC IB PC P C* TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C unless otherwise noted Parameter Value 120 120 5 800 160 500 1,000 150 -55 ~ 150 Units V V V mA mA mW mW °C °C Collector Power Dissipation Junction Temperature Storage Temperature * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics T Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob a= 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 10µA, IB = 0 IE = 1mA, IC = 0 VCB = 120V, IE = 0 VBE = 5V, IC = 0 VCE = 5V, IC = 100mA IC = 500mA, IB = 50mA VCE = 5V, IC = 500mA VCE = 5V, IC = 100mA VCB = 10V, IE = 0, f = 1MHz Min. 120 5 Typ. Max. Units V V 100 100 80 240 1.0 1.0 120 30 nA nA V V MHz pF ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSC2881 Rev. B2 KSC2881 NPN Epitaxial Silicon Transistor hFE Classification Classification hFE O 80 ~ 160 Y 120 ~ 240 Package Marking and Ordering Information Device Marking 2881 Device KSC2881 Package SOT-89 Reel Size 13” Tape Width -- Quantity 4,000 KSC2881 Rev. B2 2 www.fairchildsemi.com KSC2881 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic 0.8 Figure 2. Base-Emitter On Voltage 1.0 IB = 50mA IB = 20mA VCE = 5V IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT IB = 10mA 0.6 IB = 5mA 0.8 0.6 0.4 IB = 3mA 0.4 IB = 2mA 0.2 IB = 1mA 0.2 0.0 0 4 8 12 16 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[mV], SATURATION VOLTAGE Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 1 1000 VCE(sat) [V], SATURATION VOLTAGE VCE = 5 V IC = 10 IB hFE, DC CURRENT GAIN 100 0.1 10 0.01 1 10 100 1000 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 5. Power Derating 1.6 Figure 6. Safe Operating Area 10000 1.2 Mounted on Ceramic Board (250 mm x 0.8 mm) 2 IC [mA], COLLECTOR CURRENT PC [W], POWER DISSIPATION IC MAX. (Pulse) 1000 Ta = 25 C Single Pulse 10 ms 1 ms o IC MAX. (DC) 100 ms 100 0.8 0.4 10 0.0 0 50 o 100 150 200 1 0.1 1 10 100 1000 Ta [ C], AMBIENT TEMPERATURE VCE [V], COLLECTOR-EMITTER VOLTAGE KSC2881 Rev. B2 3 www.fairchildsemi.com KSC2881 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters KSC2881 Rev. B2 4 www.fairchildsemi.com KSC2881 NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 KSC2881 Rev. B2 www.fairchildsemi.com