KSC2883

KSC2883 KSC2883 Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 1 SOT-89 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 5 1.5 0.3 500 1,000 150 -55 ~ 150 Units V V V A A mW mW °C °C * Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10µA, IB=0 IE=1mA, IC=0 VCB=30V, IE=0 VBE=5V, IC=0 VCE=2V, IC=500mA IC=1.5A, IB=30mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz 120 40 100 Min. 30 5 100 100 320 2.0 1.0 V V MHz pF Typ. Max. Units V V nA nA Cob hFE Classification Classification hFE O 100 ~ 200 Marking Y 160 ~ 320 SHX hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2883 Typical Characteristics 1.6 1.6 IB = 10mA IB = 8mA 1.4 VCE = 2V IC [A], COLLECTOR CURRENT 1.2 IC [A], COLLECTOR CURRENT 14 16 IB = 6mA IB = 5mA IB = 4mA 0.8 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IB = 3mA IB = 2mA 0.4 IB = 1mA 0.0 0 2 4 6 8 10 12 0.0 0.4 0.8 1.2 1.6 VCE [V], COLLECTOR-EMITTER VOLTAGE VBE[V], SATURATION VOLTAGE Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage 10000 10 hFE, DC CURRENT GAIN 1000 VCE(sat) [V], SATURATION VOLTAGE VCE = 2V IC = 50 IB 1 100 0.1 10 1 1 10 100 1000 10000 0.01 1 10 100 1000 10000 IC[mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 10 1.6 IC MAX. (Pulse) 10ms IC [A], COLLECTOR CURRENT IC MAX. (DC) 1 PC [W], POWER DISSIPATION 100ms 1ms 1.2 1s M ou nt 0.8 ed on Ce ra m ic 0.1 Bo a rd 0.4 (2 5 VCEO MAX. 0m m 2 x Ta = 25 C Single Pulse 0.01 0.1 1 10 o 0. 8m m ) 150 200 0.0 100 0 50 o 100 VCE [V], COLLECTOR-EMITTER VOLATGE TA [ C], AMBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2883 Typical Characteristics (Continued) 10 1.6 IC MAX. (Pulse) 10ms 1ms IC [A], COLLECTOR CURRENT PC [W], POWER DISSIPATION 1.2 ou M IC MAX. (DC) 1 100ms ed nt on Ce m ra 0.8 ic a Bo rd 50 (2 0.1 Ta = 25 C Single Pulse Mounted on Ceramic Board 2 (250 mm x 0.8 mm) 0.01 0.1 o 0.4 No m m Hea 2 t Sin x k m 8m 0. ) 0.0 1 10 100 0 50 o 100 150 200 VCE [V], COLLECTOR-EMITTER VOLTAGE TA [ C], AMBIENT TEMPERATURE Figure 7. Safe Operating Area Figure 8. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2883 Package Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1