KSC2883_06

KSC2883 NPN Epitaxial Silicon Transistor November 2006 KSC2883 NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 tm Marking 28 PY 1 83 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC IB PC PC * TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C unless otherwise noted Parameter Value 30 30 5 1.5 0.3 500 1,000 150 -55 ~ 150 2 Units V V V A A mW mW °C °C Collector Power Dissipation Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Mounted on Ceramic Board (250mm x0.8mm) Electrical Characteristics * T Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob a= 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 10µA, IB = 0 IE = 1mA, IC = 0 VCB = 30V, IE = 0 VBE = 5V, IC = 0 VCE = 2V, IC = 500mA IC = 1.5A, IB = 30mA VCE = 2V, IC = 500mA VCE = 2V, IC = 500mA VCB = 10V, IE = 0, f = 1MHz Min. 30 5 Typ. Max. Units V V 100 100 100 320 2.0 1.0 120 40 nA nA V V MHz pF * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSC2883 Rev. B3 KSC2883 NPN Epitaxial Silicon Transistor hFE Classification Classification hFE O 100 ~ 200 Y 160 ~ 320 Package Marking and Ordering Information Device Marking 2883 Device KSC2883 Package SOT-89 Reel Size 13” Tape Width -- Quantity 4,000 2 KSC2883 Rev. B3 www.fairchildsemi.com KSC2883 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic 1.6 Figure 2. Base-Emitter On Voltage 1.6 IB = 10mA IB = 8mA 1.4 VCE = 2V IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT IB = 6mA 1.2 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 IB = 5mA IB = 4mA 0.8 IB = 3mA IB = 2mA 0.4 IB = 1mA 0.0 0 2 4 6 8 10 12 14 16 0.4 0.8 1.2 1.6 VCE [V], COLLECTOR-EMITTER VOLTAGE VBE[V], Turn On VOLTAGE Figure 3. DC Current Gain 10000 Figure 4. Collector-Emitter Saturation Voltage VCE(SAT), Collector-Emitter Voltage(V) VCE = 2V Ic=10*Ib 1 hFE, DC CURRENT GAIN 1000 100 0.1 10 0.01 1 1 10 100 1000 10000 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. Safe Operating Area 10 Figure 6. Power Derating 1.6 IC MAX. (Pulse) 10ms IC [A], COLLECTOR CURRENT IC MAX. (DC) 1 PC [W], POWER DISSIPATION 100ms 1s 1ms 1.2 M ou nt ed 0.8 on Ce ra m ic 0.1 Bo ar d 0.4 VCEO MAX. (2 50 m m 2 Ta = 25 C Single Pulse 0.01 0.1 1 10 o x0 .8 m m ) 150 200 0.0 100 0 50 o 100 VCE [V], COLLECTOR-EMITTER VOLATGE TA [ C], AMBIENT TEMPERATURE 3 KSC2883 Rev. B3 www.fairchildsemi.com KSC2883 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters 4 KSC2883 Rev. B3 www.fairchildsemi.com KSC2883 NPN Epitaxial Silicon Transistor KSC2883 NPN Epitaxial Silicon Transistor FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 5 KSC2883 Rev. B3 www.fairchildsemi.com