KSC2982

KSC2982 NPN Epitaxial Silicon Transistor July 2005 KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking 29 PY 1 82 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCES VCEO VEBO IC ICP IB IBP PC P C* TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) * Base Current (DC) Base Current (Pulse) * Ta = 25°C unless otherwise noted Parameter Value 30 30 10 6 2 4 0.4 0.8 500 1,000 150 -55 ~ 150 Units V V V V A A A A mW mW °C °C Collector Power Dissipation Junction Temperature Storage Temperature * PW ≤ 10ms, Duty Cycle ≤ 30% Mounted on Ceramic Board (250mm2 x 0.8mm) ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSC2982 Rev. B3 KSC2982 NPN Epitaxial Silicon Transistor Electrical Characteristics T Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob a= 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCB = 30V, IE = 0 VBE = 6V, IC = 0 VCE = 1V, IC = 0.5A VCE = 1V, IC = 2A IC = 2A, IB = 50mA VCE = 1V, IC = 2A VCE = 1V, IC = 2A VCB = 10V, IE = 0, f = 1MHz Min. 10 6 Typ. Max. Units V V 100 100 140 70 600 140 0.2 0.86 150 27 0.5 1.5 nA nA V V MHz pF hFE Classification Classification hFE1 A 140 ~ 240 B 200 ~ 330 C 300 ~ 450 D 420 ~ 600 Package Marking and Ordering Information Device Marking 2982 Device KSC2982 Package SOT-89 Reel Size 13” Tape Width -- Quantity 4,000 KSC2982 Rev. B3 2 www.fairchildsemi.com KSC2982 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic 4 Figure 2. DC Current Gain 1,000 IB = 60mA IB = 25mA IB = 15mA VCE=1V IC[A], COLLECTOR CURRENT IB = 10mA 2 hFE, DC CURRENT GAIN 3 100 IB = 5mA 1 0 IB = 0mA 0 1 2 3 4 10 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. DCollector-Emitter Saturation Voltage 1 Figure 4. Base-Emitter On Voltage 1.6 IC=10 IB VCE(sat)[V], SATURATION VOLTAGE PC[W], POWER DISSIPATION 1.2 0.1 0.8 M ou nt ed on Ce ra m ic Bo ar d 0.4 (2 50 m m 2 × 0. 8m m ) 0.01 0.01 0.1 1 10 0.0 0 50 o 100 150 200 IC[A], COLLECTOR CURRENT TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area 10 Figure 6. Power Derating 1.6 IC MAX. (Pulse) IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION IC MAX. (DC) 1 10 0m s 10 m s TA=25 C Single Pulse 1.2 o 0.8 M ou nt ed on VCEO MAX. 0.1 Ce ra m ic Bo ar d 0.4 (2 50 m m2 × 0. 8m m ) 0.01 0.1 1 10 100 0.0 0 50 o 100 150 200 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE KSC2982 Rev. B3 3 www.fairchildsemi.com KSC2982 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters KSC2982 Rev. B3 4 www.fairchildsemi.com KSC2982 NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 KSC2982 Rev. B3 www.fairchildsemi.com