KSC3073

KSC3073 KSC3073 Power Amplifier Application • Complement to KSA1243 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 30 30 5 3 0.6 1 15 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 2.5A IC = 2A, IB = 0.2A VCE = 2V,IC = 0.5A VCE = 2V, IC = 0.5A VCB = 10V, f =1MHz 70 25 0.3 0.75 100 35 Min. 30 5 1 1 240 0.8 1 V V MHz pF Typ. Max. Units V V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. B, September 2002 KSC3073 Typical Characteristics 4.0 1000 3.5 IC[A], COLLECTOR CURRENT 2.5 IB= 20m A hFE, DC CURRENT GAIN 3.0 IB =4 0m A 3 A 0m 100 VCE = 2 V I B= 2.0 mA I B = 15 1.5 I B = 10mA 10 1.0 IB = 5mA 0.5 0.0 0.0 IB = 3mA IB = 0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 1 1E-3 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 4.0 VCE(sat)[V], SATURATION VOLTAGE 3.5 VCE = -2V IC[A], COLLECTOR CURRENT 0.01 0.1 1 10 3.0 1 2.5 2.0 1.5 0.1 1.0 0.5 0.01 1E-3 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter on Voltage 10 24 IC M AX. (Pulse) IC M AX. (DC) 21 m 10 1m IC[A], COLLECTOR CURRENT DC 1 PC[W], POWER DISSIPATION s s 18 15 12 9 0.1 VCEO M AX. 6 3 0.01 0.1 0 1 10 100 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B, September 2002 KSC3073 Package Dimensions I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 ±0.20 ±0.20 0.60 0.70 ±0.10 6.10 ±0.20 0.80 ±0.20 1.80 MAX0.96 0.76 ±0.10 9.30 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 ©2002 Fairchild Semiconductor Corporation 16.10 ±0.30 Dimensions in Millimeters Rev. B, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1