KSC3123R

KSC3123 KSC3123 Mixer for UHF TV Tuner • GCE=23dB • CRE=0.4pF 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 20 3 50 25 150 1500 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE fT CRE GCE NF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Current Gain Bandwidth Product Reverse Transfer Capacitance Conversion Gain Output Capacitance Test Condition IC=1mA, IB=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=10V, IC=5mA VCE=10V, IC=5mA VCB=10V, IE=0, f=1MHz VCC=12V, f=200MHz fL=260MHz VCE=12V, f=200MHz, fL=260MHz 20 60 900 1400 0.4 23 3.8 5.5 0.5 Min. 20 Typ. Max. 0.1 1 240 MHz pF dB dB Units V µA µA hFE Classification Classification hFE R 60 ~ 120 Marking O 90 ~ 180 Y 120 ~ 240 HA O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC3123 Typical Characteristics fT(MHz), CURRENT GAIN-BANDWIDTH PRODUCT 1000 10000 B B hFE, DC CURRENT GAIN 100 1000 10 0.1 1 10 100 0.1 1 10 IC[mA], COLLECT CURRENT IC(mA), COLLECT CURRENT Figure 1. DC current Gain Figure 2. Current Gain Bandwidth Product 10 Cre(pF), REVERSE TRANSFER CAPACITANCE 28 32 GCE(dB), CONVERSION GAIN 24 28 GCE 20 24 16 20 12 16 8 12 NF 8 4 1 0.1 0.1 0 1 10 -20 -16 -12 -8 -4 0 4 8 VCB(V), COLLECTOR-BASE VOLTAGE Figure 3. CRE-VCB Figure 4. GCE, NF- 30 28 180 PC(mW), COLLECTOR DISSIPATION 26 24 150 GCE(dB), POWER GAIN 22 20 18 16 14 12 10 8 6 0 2 4 6 8 10 12 14 120 90 60 30 0 0 20 40 o 60 80 100 120 140 IC(mA), COLLECT CURRENT TA[ C], AMBIENT TEMPERATURE Figure 5. GCE-IC Figure 6. PC-TA ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 NF(dB), NOISE FIGURE KSC3123 Typical Characteristics (Continued) Figure 7. Figure 8. Figure 9. ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC3123 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1