KSC3503DSTU

KSC3503 KSC3503 CRT Display, Video Output • High Voltage : VCEO=300V • Low Reverse Transfer Capacitance : Cre=1.8pF @ VCB=30V 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (TA=25°C) Junction Temperature Storage Temperature Value 300 300 5 100 200 7 1.2 150 - 55 ~ 150 Units V V V mA mA W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collecto- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA IC = 20mA, IB = 2mA VCE = 30V, IC = 10mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz 150 2.6 1.8 40 Min. 300 300 5 0.1 0.1 320 0.6 1 V V MHz pF pF Typ. Max. Units V V V µA µA hFE Classification Classification hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3503 Typical Characteristics 20 IB = 120µ A 10 IB = 60µ A IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 16 IB = 100µ A IB = 80µ A 8 IB = 50µ A IB = 40µ A 12 6 IB = 6 0 µ A 8 IB = 30µ A 4 IB = 40µ A 4 IB = 20µ A IB = 20µ A IB = 0 2 IB = 1 0 µ A IB = 0 0 0 2 4 6 8 10 0 0 20 40 60 80 100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 V CE = 10V IC = 1 0 IB hFE, DC CURRENT GAIN 100 1 V BE(sat) 10 0.1 VCE (sat) 1 0.1 1 10 100 1000 0.01 0.1 1 10 100 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 160 100 VCE = 10V 140 f = 1MHz IC[mA], COLLECTOR CURRENT Cob[pF], CAPACITANCE 120 10 100 80 60 1 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.1 1 10 100 1000 VBE[V], BASE-EMITTER VOLTAGE V CB[V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3503 Typical Characteristics (Continued) 100 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 f=1MHz V CE = 3 0V Cre[pF], CAPACITANCE 10 100 1 10 0.1 0.1 1 10 100 1000 1 0.1 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 7. Reverse Transfer Capacitance Figure 8. Current Gain Gandwidth Product 1000 8 7 IC[mA], COLLECTOR CURRENT PC[W], POWER DISSIPATION IC MAX. (Pulse) 0µ 50 6 IC MAX. 100 s 5 DC (T Tc D c C = (T a = 1ms 10ms 4 25 o C) 25 C o 10 ) 3 2 1 Ta 1 1 10 100 1000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE T[ C], TEMPERATURE Figure 9. Safe Operating Area Figure 10. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3503 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E