KSC3503FSTU

2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor March 2008 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V Excellent Gain Linearity for low THD High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SA1381/KSA1381. 1 TO-126 2.Collector 3.Base 1. Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC ICP PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Ta = 25°C unless otherwise noted Parameter Ratings 300 300 5 100 200 7 1.2 - 55 ~ +150 Units V V V mA mA W W °C Total Device Dissipation, TC=25°C TC=125°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. 17.8 Units °C/W hFE Classification Classification hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 1 www.fairchildsemi.com 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collecto- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA IC = 20mA, IB = 2mA VCE = 30V, IC = 10mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz Min. 300 300 5 Typ. Max. Units V V V 0.1 0.1 40 320 0.6 1 150 2.6 1.8 µA µA V V MHz pF pF * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Ordering Information Part Number* 2SC3503CSTU 2SC3503DSTU 2SC3503ESTU 2SC3503FSTU KSC3503CSTU KSC3503DSTU KSC3503ESTU KSC3503FSTU Marking 2SC3503C 2SC3503D 2SC3503E 2SC3503F C3503C C3503D C3503E C3503F Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 Packing Method TUBE TUBE TUBE TUBE TUBE TUBE TUBE TUBE Remarks hFE1 C grade hFE1 D grade hFE1 E grade hFE1 F grade hFE1 C grade hFE1 D grade hFE1 E grade hFE1 F grade * 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 2 www.fairchildsemi.com 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Typical Characteristics 20 IB = 120µA 10 IB = 60µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 16 IB = 100µA IB = 80µA 8 IB = 50µA IB = 40µA 12 6 IB = 60µA 8 IB = 30µA 4 IB = 40µA 4 IB = 20µA IB = 10µA IB = 20µA 2 IB = 0 0 0 2 4 6 8 10 0 0 20 40 IB = 0 60 80 100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 10V IC = 10 IB hFE, DC CURRENT GAIN 100 1 VBE(sat) 10 0.1 VCE(sat) 1 0.1 1 10 100 1000 0.01 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 160 100 VCE = 10V 140 f = 1MHz IC[mA], COLLECTOR CURRENT Cob[pF], CAPACITANCE 120 100 80 60 40 20 0 0.0 10 1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.1 1 10 100 1000 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 3 www.fairchildsemi.com 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Typical Characteristics (Continued) 100 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT f=1MHz 1000 VCE = 30V Cre[pF], CAPACITANCE 10 100 1 10 0.1 0.1 1 10 100 1000 1 0.1 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 7. Reverse Transfer Capacitance Figure 8. Current Gain Gandwidth Product 1000 8 7 IC[mA], COLLECTOR CURRENT PC[W], POWER DISSIPATION IC MAX. (Pulse) 0 50 6 5 4 3 2 1 0 0 25 50 o IC MAX. 100 µs DC (T D C Tc=25 C o c = (T a 25 = 1ms 10ms o C) 25 C o 10 ) TC=125 C o 1 1 10 100 1000 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE T[ C], TEMPERATURE Figure 9. Safe Operating Area Figure 10. Power Derating © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 4 www.fairchildsemi.com 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Package Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 ±0.30 (0.50) 1.75 ±0.20 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 5 www.fairchildsemi.com 2SC3503/KSC3503 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 6 www.fairchildsemi.com